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SI3220-X-GQ 数据表(PDF) 8 Page - Silicon Laboratories |
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SI3220-X-GQ 数据表(HTML) 8 Page - Silicon Laboratories |
8 / 112 page Si3220/25 8 Rev. 1.2 Table 4. 5 V Power Supply Characteristics1 (VDD, VDD1 – VDD4 = 5V, TA = 0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade) Parameter Symbol Test Condition Min Typ Max Unit VDD1 – VDD4 Supply Current (Si3220/Si3225) IVDD1–IVDD4 Sleep mode, RESET = 0 — 1 — mA Open (high-impedance) — 22 — mA Active on-hook standby — 21 — mA Forward/reverse active off-hook —62 + ILIM + ABIAS —mA Forward/reverse active OHT OBIAS = 4 mA —65— mA Ringing, VRING =45Vrms, VBAT = –70 V, 1 REN load2 —31— mA VDD Supply Current (Si3200) IVDD Sleep mode, RESET = 0 — 110 — µA Open (high-impedance) — 110 — µA Active on-hook standby — 110 — µA Forward/reverse active off-hook, ABIAS = 4 mA, VBAT =–24 V —110 — µA Forward/reverse OHT, OBIAS = 4 mA, VBAT =–70 V —110 — µA Ringing, VRING =45Vrms, VBAT = –70 V, 1 REN load —110 — µA Notes: 1. All specifications are for a single channel based on measurements with both channels in the same operating state. 2. See "3.14.4. Ringing Power Considerations" on page 53 for current and power consumption under other operating conditions. 3. Power consumption does not include additional power required for dc loop feed. Total system power consumption must include an additional (VDD + |VBAT|) x ILOOP term. |
类似零件编号 - SI3220-X-GQ |
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类似说明 - SI3220-X-GQ |
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