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BTA54S2 数据表(PDF) 2 Page - Cystech Electonics Corp. |
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BTA54S2 数据表(HTML) 2 Page - Cystech Electonics Corp. |
2 / 4 page CYStech Electronics Corp. Spec. No. : C302S Issued Date : 2004.11.26 Revised Date : Page No. : 2/4 BAT54S2 CYStek Product Specification Absolute Maximum Ratings Symbol Parameter Conditions Min Max Unit VR continuous reverse voltage - 30 V IF continuous forward current - 200 mA IFRM repetitive peak forward current tp≤1s, δ≤0.5 - 300 mA IFSM non-repetitive peak forward current tp<10ms - 600 mA Ptot total power dissipation Tamb≤25℃ - 200 mW Tstg storage temperature -65 +150 ℃ Tj junction temperature - 125 ℃ Tamb operating ambient temperature -65 +125 ℃ Characteristics (Ta=25°C, unless otherwise specified) Parameter Symbol Condition Min. Max. Unit Reverse Breakdown Voltage VBR IR=100µA 30 - V VF(1) IF=0.1mA - 240 mV VF(2) IF=1mA - 320 mV VF(3) IF=10mA - 400 mV VF(4) IF=30mA - 500 mV Forward Voltage (Note 1) VF(5) IF=100mA - 800 mV Reverse Leakage Current (Note 2) IR VR=25V - 2 µA Diode Capacitance CD VR=1V, f=1MHz - 10 pF Reverse Recovery Time trr when switched from IF= 10mA to IR=10mA; RL=100 Ω; measured at IR=1mA - 5 ns Notes : 1.pulse test, tp=380µs, duty cycle<2%. 2.pulse test, tp=300µs, duty cycle<2%. Thermal Characteristics Symbol Parameter Conditions Value Unit Rth j-a thermal resistance from junction to ambient note 1 635 K/W Note 1 : Device mounted on a FR-4 PCB |
类似零件编号 - BTA54S2 |
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类似说明 - BTA54S2 |
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