N04L1618C2AB2 datasheet(3/10 Pages) NANOAMP

部件名	N04L1618C2AB2

功能描述	4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit

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制造商	NANOAMP [NanoAmp Solutions, Inc.]

网页	http://www.nanoamp.com

标志

3 / 10 page

(DOC# 14-02-016 REV G ECN# 01-1266)

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

NanoAmp Solutions, Inc.

N04L1618C2A

Functional Block Diagram

Functional Description

CE1

CE2

WE

OE

UB

LB

I/O0 - I/O151

1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7

are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.

MODE

POWER

H

X

XX

High Z

Standby2

2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally

isolated from any external influence and disabled from exerting any influence externally.

Standby

X

L

XX

High Z

Standby2

Standby

XX

H

High Z

Standby2

Standby

LHL

X3

3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.

L1

Data In

Write3

Active -> Standby4

4. The device will consume active power in this mode whenever addresses are changed. Data inputs are internally isolated from

any expernal influence.

LH

HL

L1

Data Out

Read

Active -> Standby4

LH

H

L1

High Z

Active

Standby4

Capacitance1

1. These parameters are verified in device characterization and are not 100% tested

Item

Symbol

Test Condition

Min

Max

Unit

Input Capacitance

CIN

VIN = 0V, f = 1 MHz, TA = 25oC

8pF

I/O Capacitance

CI/O

VIN = 0V, f = 1 MHz, TA = 25oC

8pF

Address

Inputs

A0 - A3

Address

Inputs

A4 - A17

Word

Address

Decode

Logic

16K Page

x 16 word

x 16 bit

RAM Array

Input/

Output

Mux

and

Buffers

Page

Address

Decode

Logic

Control

Logic

CE1

CE2

WE

OE

UB

LB

I/O0 - I/O7

I/O8 - I/O15

类似零件编号 - N04L1618C2AB2

制造商	部件名	数据表	功能描述
AMI SEMICONDUCTOR	N04L1630C2B	194Kb / 12P	4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K 횞 16 bit POWER SAVER TECHNOLOGY TM
	N04L1630C2BB2	194Kb / 12P	4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K 횞 16 bit POWER SAVER TECHNOLOGY TM
	N04L1630C2BT2	194Kb / 12P	4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K 횞 16 bit POWER SAVER TECHNOLOGY TM
NanoAmp Solutions, Inc.	N04L163WC1A	273Kb / 11P	4Mb Ultra-Low Power Asynchronous CMOS SRAM
NanoAmp Solutions, Inc.	N04L163WC1AB	273Kb / 11P	4Mb Ultra-Low Power Asynchronous CMOS SRAM

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类似说明 - N04L1618C2AB2

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