N01M083WL1A datasheet(1/9 Pages) NANOAMP

部件名	N01M083WL1A

功能描述	1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit

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制造商	NANOAMP [NanoAmp Solutions, Inc.]

网页	http://www.nanoamp.com

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NanoAmp Solutions, Inc.

670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035

ph: 408-935-7777, FAX: 408-935-7770

www.nanoamp.com

N01M083WL1A

Stock No. 23206-01 11/01/02

1

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM

128Kx8 bit

Overview

The N01M083WL1A is an integrated memory

device intended for non life-support (Class 1 or

2) medical applications. This device comprises a

1 Mbit Static Random Access Memory organized

as 131,072 words by 8 bits. The device is designed

and fabricated using NanoAmp’s advanced CMOS

technology with reliability inhancements for

medical users. The base design is the same as

NanoAmp’s N01M0818L2A, which has further

reliability processing for life-support (Class 3)

medical applications. The device operates with two

chip enable (CE1 and CE2) controls and output

enable (OE) to allow for easy memory expansion.

The N01M083WL1A is optimal for various

applications where low-power is critical such as

battery backup and hand-held devices. The device

can operate over a very wide temperature range of

-40oC to +85oC and is available in JEDEC

standard packages compatible with other standard

256Kb x 8 SRAMs

Features

• Single Wide Power Supply Range

2.3 to 3.6 Volts

• Very low standby current

2.0µA at 3.0V (Typical)

• Very low operating current

2.0mA at 3.0V and 1µs (Typical)

• Very low Page Mode operating current

0.8mA at 3.0V and 1µs (Typical)

• Simple memory control

Dual Chip Enables (CE1and CE2)

Output Enable (OE) for memory expansion

• Low voltage data retention

Vcc = 1.8V

• Very fast output enable access time

30ns OE access time

• Automatic power down to standby mode

• Special Processing to reduce Soft Error Rate

(SER)

Pin Configuration

Product Family

Part Number

Package Type

Operating

Temperature

Power

Supply (Vcc)

Speed

Standby

Current

(ISB), Max

Operating

Current (Icc),

Max

N01M083WL1AN

32 - STSOP I

-40oC to +85oC 2.3-3.6 Volts

70ns @ 2.7V

100ns @ 2.3V

20

µA3 mA @ 1MHz

N01M083WL1AD Known Good Die

N01M083WL1A

STSOP

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

A11

A9

A8

A13

WE

CE2

A15

VCC

NC

A16

A14

A12

A7

A6

A5

A4

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

OE

A10

CE1

I/O7

I/O6

I/O5

I/O4

I/O3

VSS

I/O2

I/O1

I/O0

A0

A1

A2

A3

Pin Descriptions

Pin Name

Pin Function

A0-A16

Address Inputs

WE

Write Enable Input

CE1, CE2

Chip Enable Input

OE

Output Enable Input

I/O0-I/O7

Data Inputs/Outputs

VCC

Power

VSS

Ground

类似零件编号 - N01M083WL1A

制造商	部件名	数据表	功能描述
NanoAmp Solutions, Inc.	N01M0818L1A	228Kb / 9P	1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit
	N01M0818L1AD	228Kb / 9P	1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit
	N01M0818L1AN	228Kb / 9P	1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit

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类似说明 - N01M083WL1A

制造商	部件名	数据表	功能描述
NanoAmp Solutions, Inc.	N01M0818L1A	228Kb / 9P	1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit
ON Semiconductor	N01L6183A	1Mb / 10P	1Mb Ultra-Low Power Asynchronous CMOS SRAM July 2008 - Rev. 8
NanoAmp Solutions, Inc.	N01L163WN1A	260Kb / 10P	1Mb Ultra-Low Power Asynchronous CMOS SRAM
	N01L083WC2A	118Kb / 1P	1Mb Ultra-Low Power Asynchronous CMOS SRAM
	N01L163WC2A	274Kb / 11P	1Mb Ultra-Low Power Asynchronous CMOS SRAM
	N01L1618N1A	222Kb / 10P	1Mb Ultra-Low Power Asynchronous CMOS SRAM
ON Semiconductor	N01L63W3A	647Kb / 10P	1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K 횞 16 bit July 2008 - Rev. 9
	N01L83W2A	527Kb / 10P	1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K 횞 8 bit July 2008 - Rev. 10
	N01L63W2A	657Kb / 10P	1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K 횞 16 bit July 2008 - Rev. 9
NanoAmp Solutions, Inc.	N08M163WL1A	234Kb / 8P	8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit