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2N3468 数据表(PDF) 1 Page - Central Semiconductor Corp |
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2N3468 数据表(HTML) 1 Page - Central Semiconductor Corp |
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1 / 1 page PROCESS CP767 Small Signal Transistor PNP- Saturated Switch Transistor Chip PRINCIPAL DEVICE TYPES 2N3467 2N3468 GEOMETRY PROCESS DETAILS R0 (24-June 2003) 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GROSS DIE PER 4 INCH WAFER 12,300 BACKSIDE COLLECTOR Process EPITAXIAL PLANAR Die Size 30 x 30 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.85 x 4.20 MILS Emitter Bonding Pad Area 7.35 x 3.75 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 15,000Å PRELIMINARY |
类似零件编号 - 2N3468 |
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类似说明 - 2N3468 |
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