GS72108AJ-12 datasheet(3/12 Pages) ETC1

部件名	GS72108AJ-12

功能描述	256K x 8 2Mb Asynchronous SRAM

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制造商	ETC1 [List of Unclassifed Manufacturers]

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GS72108ATP/J

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Rev: 1.05 10/2004

3/12

Note:

X: “H” or “L”

Note:

Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended

Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.

Truth Table

CE

OE

WE

DQ1 to DQ8

VDD Current

H

X

Not Selected

ISB1, ISB2

L

H

Read

IDD

LX

L

Write

LH

H

High Z

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Supply Voltage

VDD

–0.5 to +4.6

V

Input Voltage

VIN

–0.5 to VDD +0.5

(

≤ 4.6 V max.)

V

Output Voltage

VOUT

–0.5 to VDD +0.5

(

≤ 4.6 V max.)

V

Allowable power dissipation

PD

0.7

W

Storage temperature

TSTG

–55 to 150

oC

类似零件编号 - GS72108AJ-12

制造商	部件名	数据表	功能描述
GSI Technology	GS72108J-10	364Kb / 12P	256K x 8 2Mb Asynchronous SRAM
	GS72108J-10I	364Kb / 12P	256K x 8 2Mb Asynchronous SRAM
	GS72108J-12	364Kb / 12P	256K x 8 2Mb Asynchronous SRAM
	GS72108J-12I	364Kb / 12P	256K x 8 2Mb Asynchronous SRAM
	GS72108J-15	364Kb / 12P	256K x 8 2Mb Asynchronous SRAM

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类似说明 - GS72108AJ-12

制造商	部件名	数据表	功能描述
GSI Technology	GS72108TP-10	364Kb / 12P	256K x 8 2Mb Asynchronous SRAM
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