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2SK2571 数据表(PDF) 1 Page - Panasonic Semiconductor

部件名 2SK2571
功能描述  Silicon N-Channel Power F-MOS FET
Download  3 Pages
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制造商  PANASONIC [Panasonic Semiconductor]
网页  http://www.panasonic.com/industrial/
标志 PANASONIC - Panasonic Semiconductor

2SK2571 数据表(HTML) 1 Page - Panasonic Semiconductor

  2SK2571 Datasheet HTML 1Page - Panasonic Semiconductor 2SK2571 Datasheet HTML 2Page - Panasonic Semiconductor 2SK2571 Datasheet HTML 3Page - Panasonic Semiconductor  
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1
Power F-MOS FETs
unit: mm
2SK2571
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed
q High-speed switching
q Low ON-resistance
q No secondary breakdown
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
1: Gate
2: Drain
3: Source
TOP-3E Package
s Electrical Characteristics (T
C = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
Symbol
IDSS
IGSS
VDSS
Vth
RDS(on)
| Yfs |
VDSF
Ciss
Coss
Crss
ton
tf
td(off)
Rth(ch-c)
Rth(ch-a)
Conditions
VDS = 360V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 7A
VDS = 25V, ID = 7A
IDR = 13A, VGS = 0
VDS = 20V, VGS = 0, f = 1MHz
VDD = 150V, ID = 7A
VGS = 10V, RL = 21.4Ω
min
450
2
5
typ
0.34
8
1700
300
120
110
90
220
max
100
±1
5
0.45
−2
1.25
41.67
Unit
µA
µA
V
V
S
V
pF
pF
pF
ns
ns
ns
°C/W
°C/W
s Absolute Maximum Ratings (T
C = 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
TC = 25°C
Ta = 25°C
Symbol
VDSS
VGSS
ID
IDP
EAS*
PD
Tch
Tstg
Ratings
450
±30
±13
±26
200
100
3
150
−55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
*
L = 2.4mH, IL = 13A, 1 pulse
15.5±0.5
3.0±0.3
φ3.2±0.1
5.45±0.3
123
5.45±0.3
1.1±0.1
2.0±0.2
4.0
0.7±0.1


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