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2SK2125 数据表(PDF) 1 Page - Panasonic Semiconductor |
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2SK2125 数据表(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page 1 Power F-MOS FETs unit: mm 2SK2125 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15.6mJ q V GSS = ±30V guaranteed q High-speed switching: t f = 35ns q No secondary breakdown s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 1: Gate 2: Drain 3: Source TO-220E Package s Electrical Characteristics (T C = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Ciss Coss Crss td(on) tr tf td(off) Rth(ch-c) Conditions VDS = 400V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 1.5A VDS = 25V, ID = 1.5A IDR = 2.5A, VGS = 0 VDS = 20V, VGS = 0, f = 1MHz VGS = 10V, ID = 1.5A VDD = 150V, RL = 100Ω min 500 2 1 typ 3.2 1.5 330 55 20 15 25 30 55 max 0.1 ±1 5 4 −1.5 3.125 Unit mA µA V V Ω S V pF pF pF ns ns ns ns °C/W s Absolute Maximum Ratings (T C = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature DC Pulse TC = 25°C Ta = 25°C Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 500 ±30 ±2.5 ±10 15.6 40 2 150 −55 to +150 Unit V V A A mJ W °C °C * L = 5mH, IL = 2.5A, VDD = 50V, 1 pulse 9.9±0.3 23 1 4.6±0.2 2.9±0.2 2.6±0.1 2.54±0.2 0.75±0.1 1.2±0.15 5.08±0.4 φ3.2±0.1 1.45±0.15 0.7±0.1 7 |
类似零件编号 - 2SK2125 |
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类似说明 - 2SK2125 |
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