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2SK3101 数据表(PDF) 1 Page - Sanyo Semicon Device

部件名 2SK3101
功能描述  General-Purpose Switching Device Applications
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制造商  SANYO [Sanyo Semicon Device]
网页  https://www.sanyo-av.com/us/
标志 SANYO - Sanyo Semicon Device

2SK3101 数据表(HTML) 1 Page - Sanyo Semicon Device

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2SK3101LS
No.7910-1/5
Features
Low ON-resistance.
Low Qg.
Ultrahigh-Speed Switching Applications.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
400
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
ID
11
A
Drain Current (Pulse)
IDP
PW
≤10µs, duty cycle≤1%
44
A
Allowable Power Dissipation
PD
2.0
W
Tc=25
°C40
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Enargy (Single Pulse) *1
EAS
69.1
mJ
Avalanche Current *2
IAV
11
A
*1 VDD=50V, L=1mH, IAV=11A
*2 L
≤1mH, single pulse
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
400
V
Zero-Gate Voltage Drain Current
IDSS
VDS=320V, VGS=0
1.0
mA
Gate-to-Source Leakage Current
IGSS
VGS= ±30V, VDS=0
±100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
3.0
4.0
V
Forward Transfer Admittance
yfs
VDS=10V, ID=8A
4.0
8.0
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=8A, VGS=15V
0.32
0.4
Marking : K3101
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7910
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
81004 TS IM TB-00000033
2SK3101LS
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications


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