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KM68V257C-17 数据表(PDF) 8 Page - Samsung semiconductor |
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KM68V257C-17 数据表(HTML) 8 Page - Samsung semiconductor |
8 / 9 page KM68V257C CMOS SRAM PRELIMINARY Rev 3.0 - 8 - February 1998 FUNCTIONAL DESCRIPTION * NOTE : X means Don ′t Care. CS WE OE Mode I/O Pin Supply Current H X X* Not Select High-Z ISB, ISB1 L H H Output Disable High-Z ICC L H L Read DOUT ICC L L X Write DIN ICC DATA RETENTION CHARACTERISTICS(TA=0 to 70 °C) Parameter Symbol Test Condition Min. Typ. Max. Unit VCC for Data Retention VDR CS ≥VCC - 0.2V 2.0 - 3.6 V Data Retention Current IDR VCC = 3.0V, CS ≥VCC - 0.2V - - 0.07 mA Data Retention Set-Up Time tSDR See Data Retention Wave form(below) 0 - - ns Recovery Time tRDR 5 - - ms DATA RETENTION WAVE FORM VCC 3.0V VIH VDR CS GND Data Retention Mode CS ≥VCC - 0.2V tSDR tRDR CS controlled |
类似零件编号 - KM68V257C-17 |
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类似说明 - KM68V257C-17 |
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