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2SD1350A 数据表(PDF) 1 Page - Panasonic Semiconductor

部件名 2SD1350A
功能描述  Silicon NPN triple diffusion planer type
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制造商  PANASONIC [Panasonic Semiconductor]
网页  http://www.panasonic.com/industrial/
标志 PANASONIC - Panasonic Semiconductor

2SD1350A 数据表(HTML) 1 Page - Panasonic Semiconductor

  2SD1350A Datasheet HTML 1Page - Panasonic Semiconductor 2SD1350A Datasheet HTML 2Page - Panasonic Semiconductor  
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1
Transistor
2SD1350, 2SD1350A
Silicon NPN triple diffusion planer type
For high breakdown voltage switching
s Features
q
High collector to base voltage VCBO.
q
High collector to emitter voltage VCEO.
q
Large collector power dissipation PC.
q
Low collector to emitter saturation voltage VCE(sat).
q
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC–71
3:Emitter
M Type Mold Package
6.9
±0.1
0.55
±0.1
0.45
±0.05
2.5
±0.1
1.0
1.5
1.5 R0.9
R0.9
0.85
2.5
2.5
1
2
3
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
*
Tj
Tstg
Ratings
400
600
400
500
5
1
500
1
150
–55 ~ +150
Unit
V
V
V
A
mA
W
˚C
˚C
2SD1350
2SD1350A
2SD1350
2SD1350A
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Fall time
Storage time
Symbol
VCBO
VCEO
VEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
ton
tf
tstg
Conditions
IC = 100µA, IE = 0
IC = 500µA, IB = 0
IE = 100µA, IC = 0
VCE = 5V, IC = 30mA
IC = 250mA, IB = 50mA
*
IC = 250mA, IB = 50mA
*
VCB = 30V, IE = –20mA, f = 200MHz
VCB = 30V, IE = 0, f = 1MHz
VCC = 200V, IC = 100mA
IB1 = 10mA, IB2 = –10mA
VCC = 200V, IC = 100mA
IB1 = 10mA, IB2 = –10mA
VCC = 200V, IC = 100mA
IB1 = 10mA, IB2 = –10mA
min
400
600
400
500
5
30
typ
55
0.4
1.0
0.7
1.0
3.6
4.0
max
1.5
1.5
7
Unit
V
V
V
V
V
MHz
pF
µs
µs
µs
* Pulse measurement
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
2SD1350
2SD1350A
2SD1350
2SD1350A
2SD1350
2SD1350A
2SD1350
2SD1350A
2SD1350
2SD1350A


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