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2SD1276 数据表(PDF) 1 Page - Panasonic Semiconductor |
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2SD1276 数据表(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB950 and 2SB950A s Features q High foward current transfer ratio hFE q High-speed switching q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (T C=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 60 80 60 80 5 8 4 40 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 2SD1276 2SD1276A 2SD1276 2SD1276A TC=25°C Ta=25 °C s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Turn-on time Storage time Fall time Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 * VCE(sat) VBE fT ton tstg tf Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 3V, IC = 0.5A VCE = 3V, IC = 3A IC = 3A, IB = 12mA IC = 5A, IB = 20mA VCE = 3V, IC = 3A VCE = 10V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 12mA, IB2 = –12mA, VCC = 50V min 60 80 1000 2000 typ 20 0.5 4 1 max 200 200 500 500 2 10000 2 4 2.5 Unit µA µA mA V V V MHz µs µs µs 2SD1276 2SD1276A 2SD1276 2SD1276A 2SD1276 2SD1276A *h FE2 Rank classification Rank Q P hFE2 2000 to 5000 4000 to 10000 Internal Connection B E C Unit: mm 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0 ±0.2 5.5 ±0.2 0.5 +0.2 –0.1 1.4 ±0.1 1.3 ±0.2 0.8 ±0.1 2.54 ±0.25 5.08 ±0.5 2 13 2.7 ±0.2 4.2 ±0.2 φ3.1±0.1 |
类似零件编号 - 2SD1276 |
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类似说明 - 2SD1276 |
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