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June 2003

NEW DATASHEET ACCORDING TO PCN DSG/CT/2C13 MARKING: P70NF03L@ B70NF03L@

STB70NF03L STP70NF03L

STB70NF03L-1

N-CHANNEL 30V - 0.0075

Ω - 70A D²PAK/I²PAK/TO-220

LOW GATE CHARGE STripFET™ II POWER MOSFET

s

s

s

CONDUCTION LOSSES REDUCED

s

SWITCHING LOSSES REDUCED

s

POWER PACKAGE IN TUBE (NO SUFFIX) OR

IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

This application specific Power MOSFET is the

third genaration of STMicroelectronis unique "Sin-

gle Feature Size™" strip-based process. The re-

sulting transistor shows the best trade-off between

on-resistance and gate charge. When used as

high and low side in buck regulators, it gives the

best performance in terms of both conduction and

switching losses. This is extremely important for

motherboards where fast switching and high effi-

ciency are of paramount importance.

APPLICATIONS

s

SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY CPU CORE DC/DC

CONVERTERS

TYPE

STB70NF03L

STP70NF03L

STB70NF03L-1

30 V

30 V

30 V

< 0.0095

Ω

< 0.0095

Ω

< 0.0095

Ω

70 A

70 A

70 A

1

2

3

1

3

TO-263

(Suffix “T4”)

TO-220

1

2

3

TO-262

ABSOLUTE MAXIMUM RATINGS

(

Symbol

Parameter

Value

Unit

30

V

30

V

Gate- source Voltage

± 18

V

70

A

50

A

Drain Current (pulsed)

280

A

100

W

Derating Factor

0.67

W/°C

Peak Diode Recovery voltage slope

5.5

V/ns

Single Pulse Avalanche Energy

500

mJ

Storage Temperature

-55 to 175

°C

Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM