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SI4356DY 数据表(PDF) 1 Page - Vishay Siliconix |
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SI4356DY 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 6 page FEATURES D TrenchFETr Power MOSFETS D Optimized for Low-Side Synchronous Rectifier Operation D 100 % RG Tested APPLICATIONS D Buck Converter D Synchronous Rectifier - Secondary Rectifier Si4356DY Vishay Siliconix New Product Document Number: 71880 S-03662—Rev. B, 14-Apr-03 www.vishay.com 1 N-Channel 30-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 30 0.006 @ VGS = 10 V 17 30 0.0075 @ VGS = 4.5 V 14 SD S D SD G D SO-8 5 6 7 8 Top View 2 3 4 1 N-Channel MOSFET D G S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS "12 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID 17 12 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID 14 9 A Pulsed Drain Current IDM "50 A Continuous Source Current (Diode Conduction)a IS 2.7 1.40 Maximum Power Dissipationa TA = 25_C PD 3.0 1.6 W Maximum Power Dissipationa TA = 70_C PD 2.0 1.0 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction to Ambient (MOSFET)a t v 10 sec R 34 41 Maximum Junction-to-Ambient (MOSFET)a Steady State RthJA 67 80 _C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 15 19 Notes a. Surface Mounted on 1” x 1” FR4 Board. |
类似零件编号 - SI4356DY |
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类似说明 - SI4356DY |
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