SI7942DP-T1 datasheet(4/6 Pages) VISHAY

部件名	SI7942DP-T1

功能描述	Dual N-Channel 100-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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Si7942DP

Vishay Siliconix

www.vishay.com

4

Document Number: 72118

S-03373—Rev. A, 03-Mar-03

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

P(t) = 0.1

10-3

10-2

1

10

600

10-1

10-4

100

0

60

100

20

40

Single Pulse Power

Time (sec)

80

-1.2

-0.8

-0.4

0.0

0.4

0.8

-50

-25

0

25

50

75

100

125

150

ID = 250 mA

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Threshold Voltage

TJ - Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 60_C/W

3. TJM - TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

100

600

0.01

0.001

1

10

Safe Operating Area, Junction-To-Ambient

VDS - Drain-to-Source Voltage (V)

100

1

0.1

1

10

100

0.01

10

TA = 25_C

Single Pulse

0.1

IDM

Limited

ID(on)

Limited

rDS(on) Limited

BVDSS Limited

0.1

P(t) = 10

dc

P(t) = 1

P(t) = 0.01

P(t) = 0.001

P(t) = 0.0001

类似零件编号 - SI7942DP-T1

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI7942DP	206Kb / 4P	Dual N-Channel 100-V (D-S) MOSFET Rev. B, 27-Feb-06
Vishay Telefunken	SI7942DP	338Kb / 12P	Dual N-Channel 100-V (D-S) MOSFET
Vishay Siliconix	SI7942DP	339Kb / 12P	Dual N-Channel 100-V (D-S) MOSFET 01-Jan-2022
	SI7942DP	206Kb / 4P	Dual N-Channel 100-V (D-S) MOSFET Rev. B, 27-Feb-06
	SI7942DP	339Kb / 12P	Dual N-Channel 100-V (D-S) MOSFET 01-Jan-2022

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