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PZT65 数据表(PDF) 2 Page - ON Semiconductor |
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PZT65 数据表(HTML) 2 Page - ON Semiconductor |
2 / 6 page PZT651T1 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 60 — Vdc Collector–Emitter Breakdown Voltage (IC = 100 µAdc, IE = 0) V(BR)CBO 80 — Vdc Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) V(BR)EBO 5.0 — Vdc Base–Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO — 0.1 µAdc Collector–Base Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO — 100 nAdc ON CHARACTERISTICS (2) DC Current Gain (IC = 50 mAdc, VCE = 2.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) (IC = 1.0 Adc, VCE = 2.0 Vdc) (IC = 2.0 Adc, VCE = 2.0 Vdc) hFE 75 75 75 40 — — — — — Collector–Emitter Saturation Voltages (IC = 2.0 Adc, IB = 200 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) — — 0.5 0.3 Vdc Base–Emitter Voltages (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) — 1.0 Vdc Base–Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) VBE(sat) — 1.2 Vdc Current–Gain — Bandwidth (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT 75 — MHz 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle = 2.0% |
类似零件编号 - PZT65 |
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类似说明 - PZT65 |
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