1

Motorola Bipolar Power Transistor Device Data

Advance Information

PNP Silicon Power Transistor

The MJE9780 is designed for vertical output of 14–inch to 17–inch televisions and

CRT monitors, as well as other applications requiring a 150 volt PNP transistor.

Features:

• Standard TO–220AB Package

• Gain Range of 50 – 200 at 500 mAdc/10 volts

Rating

Symbol

MJE9780

Unit

Collector–Emitter Sustaining Voltage

VCEO

150

Vdc

Collector–Base Voltage

VCBO

200

Vdc

Emitter–Base Voltage

VEBO

6.0

Vdc

Collector Current — Continuous

IC

ICM

3.0

5.0

Adc

Total Power Dissipation (TA = 25°C)

Derate above 25

°C

PD

2.0

0.016

Watts

W/

°C

Total Power Dissipation

Derate above 25

°C

PD

40

0.32

Watts

W/

°C

Operating and Storage Temperature

TJ, Tstg

– 55 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

R

θJC

R

θJA

3.12

62.5

°C/W

Maximum Lead Temperature for Soldering

Purposes: 1/8

″ from Case for 5 Seconds

TL

260

°C

Characteristics

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS*

Collector–Emitter Sustaining Voltage

(IC = 50 mA, IB = 0)

VCEO(sus)

°

150

°

—

—

Vdc

Collector–Base Voltage

(IC = 5.0 mAdc)

VCBO

200

—

—

Vdc

Emitter–Base Voltage

(IB = 5.0 mAdc)

VEBO

6.0

—

—

Vdc

Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0)

IEBO

—

—

10

µAdc

Collector Cutoff Current

(VCB = 150 Vdc, IE = 0)

ICBO

—

—

10

µAdc

* Indicates Pulse Test: P.W. = 300

µsec max, Duty Cycle = 2%.

(continued)

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE9780/D

MJE9780

PNP SILICON POWER

TRANSISTOR

3.0 AMPERES

150 VOLTS

*Motorola Preferred Device

*

CASE 221A–06

TO–220AB

REV 7