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AM29LV033MUU112RFI 数据表(PDF) 1 Page - Advanced Micro Devices |
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AM29LV033MUU112RFI 数据表(HTML) 1 Page - Advanced Micro Devices |
1 / 56 page ADVANCE INFORMATION This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Publication# 26519 Rev: A Amendment/+2 Issue Date: November 11, 2002 Refer to AMD’s Website (www.amd.com) for the latest information. Am29LV033MU 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES ■ Single power supply operation — 3 volt read, erase, and program operations ■ VersatileI/O control — Device generates and tolerates data voltages on CE# and DQ inputs/outputs as determined by the voltage on the V IO pin; operates from 1.65 to 3.6 V ■ Manufactured on 0.23 µm MirrorBit process technology ■ SecSi (Secured Silicon) Sector region — 256-byte sector for permanent, secure identification through an 16-byte random Electronic Serial Number, accessible through a command sequence — May be programmed and locked at the factory or by the customer ■ Flexible sector architecture — Sixty-four 64 Kbyte sectors ■ Compatibility with JEDEC standards — Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection ■ Minimum 100,000 erase cycle guarantee per sector ■ 20-year data retention at 125 °C PERFORMANCE CHARACTERISTICS ■ High performance — 90 ns access time — 25 ns page read times — 0.4 s typical sector erase time — 3.0 µs typical write buffer byte programming time: 32-byte write buffer reduces overall programming time for multiple-byte updates — 8-byte read page buffer — 32-byte write buffer ■ Low power consumption (typical values at 3.0 V, 5MHz) — 30 mA typical initial Page read current; 10 mA typical intra-Page read current — 50 mA typical erase/program current — 1 µA typical standby mode current ■ Package options — 40-pin TSOP — 48-ball FBGA SOFTWARE & HARDWARE FEATURES ■ Software features — Program Suspend & Resume: read other sectors before programming operation is completed — Erase Suspend & Resume: read/program other sectors before an erase operation is completed — Data# polling & toggle bits provide status — Unlock Bypass Program command reduces overall multiple-byte programming time — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices ■ Hardware features — Sector Group Protection: hardware method of preventing write operations within a sector group — Temporary Sector Unprotect: V ID-level method of changing code in locked sectors — ACC (high voltage) pin accelerates programming time for higher throughput during system production — Hardware reset pin (RESET#) resets device — Ready/Busy# pin (RY/BY#) detects program or erase cycle completion |
类似零件编号 - AM29LV033MUU112RFI |
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类似说明 - AM29LV033MUU112RFI |
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