数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

MJ10023 数据表(PDF) 5 Page - ON Semiconductor

部件名 MJ10023
功能描述  NPN SILICON POWER DARLINGTON TRANSISTOR
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

MJ10023 数据表(HTML) 5 Page - ON Semiconductor

  MJ10023 Datasheet HTML 1Page - ON Semiconductor MJ10023 Datasheet HTML 2Page - ON Semiconductor MJ10023 Datasheet HTML 3Page - ON Semiconductor MJ10023 Datasheet HTML 4Page - ON Semiconductor MJ10023 Datasheet HTML 5Page - ON Semiconductor MJ10023 Datasheet HTML 6Page - ON Semiconductor MJ10023 Datasheet HTML 7Page - ON Semiconductor MJ10023 Datasheet HTML 8Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 5 / 8 page
background image
MJ10023
5
Motorola Bipolar Power Transistor Device Data
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power supplies
and hammer drivers, current and voltage waveforms are not
in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
this reason, the following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% VCEM
trv = Voltage Rise Time, 10–90% VCEM
tfi = Current Fall Time, 90–10% ICM
tti = Current Tail, 10–2% ICM
tc = Crossover Time, 10% VCEM to 10% ICM
An enlarged portion of the inductive switching waveform is
shown in Figure 7 to aid on the visual identity of these terms.
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained us-
ing the standard equation from AN–222A:
PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi ` tc. However, at lower test currents this
relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25
_C and has become a benchmark
for designers. However, for designers of high frequency con-
verter circuits, the user orinented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100_C.
2.0
5.0
10
20
40
0.4
1.0
0.02
0.05
0.1
0.2
0.5
1.0
2.0
Figure 10. Typical Turn–On Switching Times
IC, COLLECTOR CURRENT (AMPS)
2.0
5.0
10
20
40
Figure 11. Typical Turn–Off Switching Times
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Thermal Response
t, TIME (ms)
1.0
0.01
0.1
0.1
1.0
10
100
10000
R
θJC(t) = r(t) RθJC
R
θJC = 0.7°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
SINGLE PULSE
1000
0.02
0.05
0.1
0.2
0.5
1.0
2.0
tf
VCC = 250 V
IC/IB1 = 20
TJ = 25°C
ts
td
tr
0.4
1.0
VCC = 250 V
IC/IB1 = 20
VBE(off) = 5 V
D = 0.5
0.5
0.2
0.05
DUTY CYCLE, D = t1/t2
0.2
0.1
RESISTIVE SWITCHING


类似零件编号 - MJ10023

制造商部件名数据表功能描述
logo
Mospec Semiconductor
MJ10023 MOSPEC-MJ10023 Datasheet
202Kb / 4P
   POWER TRANSISTORS(40A,350-400V,250W)
logo
Motorola, Inc
MJ10023 MOTOROLA-MJ10023 Datasheet
300Kb / 8P
   40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS
logo
Wing Shing Computer Com...
MJ10023 WINGS-MJ10023 Datasheet
189Kb / 1P
   Silicon NPN Power Darlington Transistor
logo
Central Semiconductor C...
MJ10023 CENTRAL-MJ10023 Datasheet
54Kb / 1P
   Power Transistors
logo
New Jersey Semi-Conduct...
MJ10023 NJSEMI-MJ10023 Datasheet
102Kb / 2P
   NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode
More results

类似说明 - MJ10023

制造商部件名数据表功能描述
logo
NEC
2SD1630 NEC-2SD1630 Datasheet
125Kb / 2P
   NPN SILICON DARLINGTON POWER TRANSISTOR
logo
Microsemi Corporation
JANTX2N6284 MICROSEMI-JANTX2N6284 Datasheet
64Kb / 2P
   NPN DARLINGTON POWER SILICON TRANSISTOR
logo
Inchange Semiconductor ...
2SD1072 ISC-2SD1072 Datasheet
259Kb / 2P
   Silicon NPN Darlington Power Transistor
2SD1124 ISC-2SD1124 Datasheet
260Kb / 2P
   Silicon NPN Darlington Power Transistor
2SD1202 ISC-2SD1202 Datasheet
253Kb / 2P
   Silicon NPN Darlington Power Transistor
2SD650 ISC-2SD650 Datasheet
266Kb / 2P
   Silicon NPN Darlington Power Transistor
logo
M/A-COM Technology Solu...
2N6249 MA-COM-2N6249 Datasheet
446Kb / 4P
   NPN Darlington Power Silicon Transistor
logo
New Jersey Semi-Conduct...
BU180 NJSEMI-BU180 Datasheet
125Kb / 2P
   Silicon NPN Darlington Power Transistor
BU807FI NJSEMI-BU807FI Datasheet
125Kb / 2P
   Silicon NPN Darlington Power Transistor
BDX33A NJSEMI-BDX33A Datasheet
121Kb / 2P
   Silicon NPN Darlington Power Transistor
BDX53F NJSEMI-BDX53F Datasheet
129Kb / 2P
   Silicon NPN Darlington Power Transistor
More results


Html Pages

1 2 3 4 5 6 7 8


数据表 下载

Go To PDF Page


链接网址




隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com