MJ10020 MJ10021

3

Motorola Bipolar Power Transistor Device Data

0.2

0.4

6.0 8.0 10

20

100

0.1

40

60 80

2.0

1000

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

2.0

3.0

5.0 7.0

10

20

100

500

70

50

0.1

Figure 2. Collector Saturation Region

IC, COLLECTOR CURRENT (AMPS)

10

2.1

1.8

0.9

0.6

Figure 3. Collector–Emitter Saturation Voltage

IC, COLLECTOR CURRENT (AMPS)

5.0

0.01

Figure 4. Base–Emitter Voltage

IB, BASE CURRENT (AMPS)

0.1

10

4.5

0.5

700

VCE = 5.0 V

30

0.3

IC = 1.0 A

TJ = 25°C

TJ = 100°C

3.0

VR, REVERSE VOLTAGE (VOLTS)

20

100

1000

– 0.2

Figure 5. Collector Cutoff Region

VBE, BASE–EMITTER VOLTAGE (VOLTS)

102

101

10 –1

Figure 6. Output Capacitance

104

100

103

100

0

+ 0.2

+ 0.4

+ 0.8

VCE = 250 V

TJ = 125°C

= 10 A

100

°C

75

°C

25

°C

TJ = 25°C

100

200

10

20

1.0

30

50

70

TJ = 25°C

3.0

5.0 7.0

20

100

30

50

70

+ 0.6

700

500

300

200

300

200

70

50

30

10

7.0

5.0

TJ = 100°C

TJ = 25°C

IC/IB = 25

= 30 A

= 60 A

TJ = 100°C

TJ = 25°C

5.0

2.0

1.0

0.5

0.2

0.02

0.05

4.0

3.5

3.0

2.5

2.0

1.5

1.0

1.2

1.5

2.4

2.7

3.0

2.1

1.8

0.9

0.6

0.3

1.2

1.5

2.4

2.7

3.0

IC/IB = 25

3.0

0.3

TYPICAL ELECTRICAL CHARACTERISTICS