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STGP20NC60V 数据表(PDF) 6 Page - STMicroelectronics |
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STGP20NC60V 数据表(HTML) 6 Page - STMicroelectronics |
6 / 11 page STGP20NC60V - STGW20NC60V 6/11 Figure 15: Thermal Impedance Figure 16: Turn-Off SOA Figure 17: Ic vs Frequency For a fast IGBT suitable for high frequency appli- cations, the typical collector current vs. maximum operating frequency curve is reported. That fre- quency is defined as follows: fMAX = (PD - PC) / (EON + EOFF) 1) The maximum power dissipation is limited by maximum junction to case thermal resistance: PD = ∆T / RTHJ-C considering ∆T = TJ - TC = 125 °C- 75 °C = 50°C 2) The conduction losses are: PC = IC * VCE(SAT) * δ with 50% of duty cycle, VCESAT typical value @125°C. 3) Power dissipation during ON & OFF commuta- tions is due to the switching frequency: PSW = (EON + EOFF) * freq. 4) Typical values @ 125°C for switching losses are used (test conditions: VCE = 390V, VGE = 15V, RG = 3.3 Ohm). Furthermore, diode recovery en- ergy is included in the EON (see note 2), while the tail of the collector current is included in the EOFF measurements (see note 3). |
类似零件编号 - STGP20NC60V |
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类似说明 - STGP20NC60V |
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