May 2005

©2005 Fairchild Semiconductor Corporation

FDS6900AS Rev B(X)

FDS6900AS

Dual N-Ch PowerTrench

®

SyncFET

™

General Description

The FDS6900AS is designed to replace two single SO-

8 MOSFETs and Schottky diode in synchronous DC:DC

power supplies that provide various peripheral voltages

for notebook computers and other battery powered

electronic devices. FDS6900AS contains two unique

30V, N-channel, logic level, PowerTrench MOSFETs

designed to maximize power conversion efficiency.

The high-side switch (Q1) is designed with specific

emphasis on reducing switching losses while the low-

side switch (Q2) is optimized to reduce conduction

losses. Q2 also includes an integrated Schottky diode

using Fairchild’s monolithic SyncFET technology.

Features

•

Q2:

Optimized to minimize conduction losses

Includes SyncFET Schottky body diode

8.2A, 30V

R

R

•

Q1:

Optimized for low switching losses

Low Gate Charge (11nC typical)

6.9A, 30V

R

R

•

8

1

7

2

6

3

5

4

Dual N-Channel SyncFet

Q1

Q2

A

= 25°C unless otherwise noted

Symbol

Parameter

Q2

Q1

Units

Drain-Source Voltage

30

30

V

Gate-Source Voltage

±20

±20

V

Drain Current

- Continuous

(Note 1a)

8.2

6.9

A

- Pulsed

30

20

Power Dissipation for Dual Operation

2

W

Power Dissipation for Single Operation

(Note 1a)

1.6

(Note 1b)

1

(Note 1c)

0.9

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

78

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

40

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6900AS

FDS6900AS

13”

12mm

2500 units

FDS6900AS

13”

12mm

2500 units

S

D

S

S

SO-

D

D

D

G

G1

S1D2

S1D2

S1D2

D1

D1

G2

S2

Pin 1

SO-8