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FDS6680AS_NL 数据表(PDF) 6 Page - Fairchild Semiconductor |
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FDS6680AS_NL 数据表(HTML) 6 Page - Fairchild Semiconductor |
6 / 8 page FDS6680AS Rev B(X) Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6680AS. Figure 12. FDS6680AS SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6680). 10nS/div 0 Figure 13. Non-SyncFET (FDS6680) body diode reverse recovery characteristic. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.000001 0.00001 0.0001 0.001 0.01 0.1 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) TA = 125 oC TA = 25 oC TA = 100 oC Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. 10nS/DIV |
类似零件编号 - FDS6680AS_NL |
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类似说明 - FDS6680AS_NL |
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