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BAS16HT1G 数据表(PDF) 2 Page - Fairchild Semiconductor |
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BAS16HT1G 数据表(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page ©2004 Fairchild Semiconductor Corporation BAS16HT1G, Rev. A Typical Characteristics Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100 µA Figure 2. Reverse Current vs Reverse Voltage IR - 10 to 100V Figure 3. Forward Voltage vs Forward Current VF - 1.0 to 100 µA Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10mA Figure 5. Forward Voltage vs Forward Current VF - 10 - 800mA Figure 6. Total Capacitance 1 2 3 5 10 20 30 50 100 110 120 130 140 150 Reverse Current, I R [uA] Ta= 25 °C Ta= 25 °C GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature 10 20 30 50 70 100 0 50 100 150 200 250 300 Reverse Voltage, V R [v] 225 1 2 3 5 10 20 30 50 100 250 300 350 400 450 Forward Current, I F [uA] F 485 Ta= 25 °C 0.1 0.2 0.3 0.5 1 2 3 5 10 450 500 550 600 650 700 Forward Current, I F [mA] 725 Ta= 25 °C 10 20 30 50 100 200 300 500 0.6 0.8 1 1.2 1.4 Forward Current, I F [mA] 1.5 Ta= 25 °C 02 46 8 10 12 14 1 1.1 1.2 1.3 Reverse Voltage [V] Ta= 25 °C 15 |
类似零件编号 - BAS16HT1G |
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类似说明 - BAS16HT1G |
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