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1N483B 数据表(PDF) 1 Page - Fairchild Semiconductor |
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1N483B 数据表(HTML) 1 Page - Fairchild Semiconductor |
1 / 2 page ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com January 2005 1N483B Rev. A 1N483B Small Signal Diode Absolute Maximum Ratings * T a = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Electrical Characteristics T C = 25°C unless otherwise noted Symbol Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 80 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond 1.0 4.0 A A TSTG Storage Temperature Range -65 to +200 °C TJ Operating Junction Temperature 175 °C Symbol Parameter Value Unit PD Power Dissipation 500 mW RθJA Thermal Resistance, Junction to Ambient 300 °C/W Symbol Parameter Conditions Min. Max Units VR Breakdown Voltage IR = 100µA80 V VF Forward Voltage IF = 100mA 1.0 V IR Reverse Leakage VR = 60V VR = 60V, TA = 150°C 25 5 nA µA DO-35 Color Band Denotes Cathode |
类似零件编号 - 1N483B |
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类似说明 - 1N483B |
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