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KMM53616000CK 数据表(PDF) 7 Page - Samsung semiconductor

部件名 KMM53616000CK
功能描述  16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
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制造商  SAMSUNG [Samsung semiconductor]
网页  http://www.samsung.com/Products/Semiconductor
标志 SAMSUNG - Samsung semiconductor

KMM53616000CK 数据表(HTML) 7 Page - Samsung semiconductor

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DRAM MODULE
KMM53616000CK/CKG
NOTES
An initial pause of 200us is required after power-up followed
by any 8 RAS-only or CAS-before-RAS refresh cycles before
proper device operation is achieved.
Input voltage levels are Vih/Vil. VIH(min) and VIL(max) are ref-
erence levels for measuring timing of input signals. Transition
times are measured between VIH(min) and VIL(max) and are
assumed to be 5ns for all inputs.
Measured with a load equivalent to 2 TTL loads and 100pF.
Operation within the
tRCD(max) limit insures that tRAC(max)
can be met.
tRCD(max) is specified as a reference point only.
If
tRCD is greater than the specified tRCD(max) limit, then
access time is controlled exclusively by
tCAC.
Assumes that
tRCD
tRCD(max).
This parameter defines the time at which the output achieves
the open circuit condition and is not referenced to VOH or
VOL.
tWCS is non-restrictive operating parameter. It is included in
the
data
sheet
as
electrical
characteristics
only.
If
tWCS
tWCS(min), the cycle is an early write cycle and the
data out pin will remain high impedance for the duration of
the cycle.
Either
tRCH or tRRH must be satisfied for a read cycle.
These parameters are referenced to the CAS leading edge in
early write cycles.
Operation within the
tRAD(max) limit insures that tRAC(max)
can be met.
tRAD(max) is specified as reference point only. If
tRAD is greater than the specified tRAD(max) limit, then
access time is controlled by
tAA.
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
Test condition : Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V, output loading CL=100pF
Parameter
Symbol
-5
-6
Unit
Note
Min
Max
Min
Max
Fast page mode cycle time
tPC
35
40
ns
CAS precharge time(Fast page cycle)
tCP
10
10
ns
RAS pulse width(Fast page cycle)
tRASP
50
200K
60
200K
ns
W to RAS precharge time(C-B-R refresh)
tWRP
10
10
ns
W to RAS hold time(C-B-R refresh)
tWRH
10
10
ns
AC CHARACTERISTICS (0
°C≤TA≤70°C, VCC=5.0V±10%. See notes 1,2.)


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