数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

KMM5361205C2WG 数据表(PDF) 6 Page - Samsung semiconductor

部件名 KMM5361205C2WG
功能描述  1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
Download  17 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  SAMSUNG [Samsung semiconductor]
网页  http://www.samsung.com/Products/Semiconductor
标志 SAMSUNG - Samsung semiconductor

KMM5361205C2WG 数据表(HTML) 6 Page - Samsung semiconductor

Back Button KMM5361205C2WG Datasheet HTML 2Page - Samsung semiconductor KMM5361205C2WG Datasheet HTML 3Page - Samsung semiconductor KMM5361205C2WG Datasheet HTML 4Page - Samsung semiconductor KMM5361205C2WG Datasheet HTML 5Page - Samsung semiconductor KMM5361205C2WG Datasheet HTML 6Page - Samsung semiconductor KMM5361205C2WG Datasheet HTML 7Page - Samsung semiconductor KMM5361205C2WG Datasheet HTML 8Page - Samsung semiconductor KMM5361205C2WG Datasheet HTML 9Page - Samsung semiconductor KMM5361205C2WG Datasheet HTML 10Page - Samsung semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 6 / 17 page
background image
DRAM MODULE
KMM5361205C2W/C2WG
Rev. 0.0 (Nov. 1997)
- 6 -
CAPACITANCE (TA = 25
°C, VCC=5V, f = 1MHz)
Item
Symbol
Min
Max
Unit
Input capacitance[A0-A9]
Input capacitance[ W]
Input capacitance[ RAS0]
Input capacitance[ CAS0 - CAS3]
Input/Output capacitance[DQ0-35]
CIN1
CIN2
CIN3
CIN4
CDQ1
-
-
-
-
-
30
40
30
25
20
pF
pF
pF
pF
pF
Test condition : Vih/Vil=2.4/0.8V, Voh/Vol=2.0/0.8V, Output loading CL=100pF
Parameter
Symbol
-5
-6
Unit
Note
Min
Max
Min
Max
Random read or write cycle time
tRC
90
110
ns
Access time from RAS
tRAC
50
60
ns
3,4,10
Access time from CAS
tCAC
15
17
ns
3,4,5
Access time from column address
tAA
25
30
ns
3,10
CAS to output in Low-Z
tCLZ
3
3
ns
3
Output buffer turn-off delay from CAS
tCEZ
3
13
3
15
ns
6,11,12
Transition time(rise and fall)
tT
2
50
2
50
ns
2
RAS precharge time
tRP
30
40
ns
RAS pulse width
tRAS
50
10K
60
10K
ns
RAS hold time
tRSH
13
17
ns
CAS hold time
tCSH
40
50
ns
CAS pulse width
tCAS
8
10K
10
10K
ns
13
RAS to CAS delay time
tRCD
20
37
20
45
ns
4
RAS to column address delay time
tRAD
15
25
15
30
ns
10
CAS to RAS precharge time
tCRP
5
5
ns
Row address set-up time
tASR
0
0
ns
Row address hold time
tRAH
10
10
ns
Column address set-up time
tASC
0
0
ns
Column address hold time
tCAH
8
10
ns
Column address to RAS lead time
tRAL
25
30
ns
Read command set-up time
tRCS
0
0
ns
Read command hold time referenced to CAS
tRCH
0
0
ns
8
Read command hold time referenced to RAS
tRRH
0
0
ns
8
Write command hold time
tWCH
10
10
ns
Write command pulse width
tWP
10
10
ns
Write command to RAS lead time
tRWL
13
15
ns
Write command to CAS lead time
tCWL
13
10
ns
Data-in set-up time
tDS
0
0
ns
9
Data-in hold time
tDH
8
10
ns
9
Refresh period
tREF
16
16
ms
Write command set-up time
tWCS
0
0
ns
7
CAS setup time(CAS-before-RAS refresh)
tCSR
5
5
ns
CAS hold time(CAS-before-RAS refresh)
tCHR
10
10
ns
RAS precharge to CAS hold time
tRPC
5
5
ns
Access time from CAS precharge
tCPA
30
35
ns
3
AC CHARACTERISTICS (0
°C≤TA≤70°C, VCC=5.0V±10%. See notes 1,2.)


类似零件编号 - KMM5361205C2WG

制造商部件名数据表功能描述
logo
Samsung semiconductor
KMM5361203C2W SAMSUNG-KMM5361203C2W Datasheet
280Kb / 17P
   1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh
KMM5361203C2WG SAMSUNG-KMM5361203C2WG Datasheet
280Kb / 17P
   1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh
More results

类似说明 - KMM5361205C2WG

制造商部件名数据表功能描述
logo
Samsung semiconductor
KMM5362205C2W SAMSUNG-KMM5362205C2W Datasheet
296Kb / 17P
   2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
KMM5361203C2W SAMSUNG-KMM5361203C2W Datasheet
280Kb / 17P
   1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh
KMM5362203C2W SAMSUNG-KMM5362203C2W Datasheet
284Kb / 17P
   2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V
KMM5364003BSW SAMSUNG-KMM5364003BSW Datasheet
351Kb / 18P
   4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5364003CSW SAMSUNG-KMM5364003CSW Datasheet
391Kb / 20P
   4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5364005CSW SAMSUNG-KMM5364005CSW Datasheet
415Kb / 21P
   4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5364005BSW SAMSUNG-KMM5364005BSW Datasheet
393Kb / 19P
   4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5364005CK SAMSUNG-KMM5364005CK Datasheet
277Kb / 15P
   4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V
KMM5364003CK SAMSUNG-KMM5364003CK Datasheet
286Kb / 17P
   4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V
KMM5322204C2W SAMSUNG-KMM5322204C2W Datasheet
287Kb / 17P
   2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17


数据表 下载

Go To PDF Page


链接网址




隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com