SI3483DV datasheet(2/5 Pages) VISHAY

部件名	SI3483DV

功能描述	P-Channel 30-V (D-S) MOSFET

Download	5 Pages

Scroll/Zoom	100%

制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

标志

2 / 5 page

Si3483DV

Vishay Siliconix

www.vishay.com

2

Document Number: 72078

S-40238—Rev. B, 16-Feb-04

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 mA

−1.0

−3

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = −30 V, VGS = 0 V

−1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = −30 V, VGS = 0 V, TJ = 85_C

−5

mA

On-State Drain Currenta

ID(on)

VDS v −5 V, VGS = −10 V

−25

A

Drain Source On State Resistancea

rDS( )

VGS = −10 V, ID = −6.2 A

0.028

0.035

W

Drain-Source On-State Resistancea

rDS(on)

VGS = −4.5 V, ID = −5.0 A

0.042

0.053

W

Forward Transconductancea

gfs

VDS = −15 V, ID = −6.2 A

14

S

Diode Forward Voltagea

VSD

IS = −1.7 A, VGS = 0 V

−0.8

−1.2

V

Dynamicb

Total Gate Charge

Qg

23

35

Gate-Source Charge

Qgs

VDS = −15 V, VGS = −10 V, ID = −6.2 A

3.6

nC

Gate-Drain Charge

Qgd

6

Turn-On Delay Time

td(on)

10

15

Rise Time

tr

VDD = −15 V, RL = 15 W

10

15

Turn-Off Delay Time

td(off)

VDD = −15 V, RL = 15 W

ID ^ −1 A, VGEN = −10 V, Rg = 6 W

71

110

ns

Fall Time

tf

45

70

Source-Drain Reverse Recovery Time

trr

IF = −1.7 A, di/dt = 100 A/ms

45

70

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

5

10

15

20

25

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

5

10

15

20

25

0

1234

5

VGS = 10 thru 5 V

TC = 125_C

−55_C

4 V

25_C

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

3 V

类似零件编号 - SI3483DV

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI3483DDV	223Kb / 9P	P-Channel 30 V (D-S) MOSFET 01-Jan-2022
Vishay Siliconix	SI3483DDV-T1-GE3	223Kb / 9P	P-Channel 30 V (D-S) MOSFET 01-Jan-2022

More results

类似说明 - SI3483DV

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI2341DS	43Kb / 5P	P-Channel 30-V (D-S) MOSFET Rev. B, 11-Aug-03
Vishay Siliconix	SI4835BDY	90Kb / 6P	P-Channel 30-V (D-S) MOSFET Rev. D, 25-Oct-0
Anachip Corp	AF4407	263Kb / 5P	P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI7423DN	173Kb / 3P	P-Channel 30-V (D-S) MOSFET 24-May-04
	SI2303ADS	39Kb / 4P	P-Channel, 30-V (D-S) MOSFET Rev. B, 29-Apr-02
	SI3481DV	67Kb / 5P	P-Channel 30-V (D-S) MOSFET Rev. B, 16-Feb-04
DinTek Semiconductor Co...	DTM4415	286Kb / 9P	P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4435DDY-T1-GE3	279Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. C, 18-May-09
	SI7121DN	552Kb / 13P	P-Channel 30-V (D-S) MOSFET Rev. C, 23-Jun-08
	SI4825DDY-T1	242Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. A, 13-Oct-08
	SI7129DN	566Kb / 13P	P-Channel 30 V (D-S) MOSFET Rev. B, 06-Sep-10