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LD1106S 数据表(PDF) 1 Page - List of Unclassifed Manufacturers

部件名 LD1106S
功能描述  High Performance N-Channel POWERJFET with Schottky Diode
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制造商  ETC1 [List of Unclassifed Manufacturers]
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标志 ETC1 - List of Unclassifed Manufacturers

LD1106S 数据表(HTML) 1 Page - List of Unclassifed Manufacturers

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LD1106S.Rev 0.92 – AD 12-04
PWRLITE LD1106S
High Performance N-Channel POWERJFETTM with Schottky Diode
Features
Trench Power JFET with low threshold voltage Vth.
Device fully “ON” with Vgs = 0.7V
Optimum for “Low Side” Buck Converters
Optimized for Secondary Rectification in isolated DC-DC
Low Rg and low Cds for high speed switching
No “Body Diode”; extremely low Cds
Added Fast Recovery Schottky Diode in same package
Applications
DC-DC Converters for DDR and Graphic designs
Synchronous Rectifiers
PC Motherboard Converters
Step-down power supplies
Brick Modules
VRM Modules
DPAK Pin Assignments
Description
The Power JFET transistor from Lovoltech is a device that
presents a Low Rdson allowing for improved efficiencies in DC-
DC switching applications. The device is designed with a low
threshold such that drivers can operate at 5V, which reduces the
driver power dissipation and increases the overall efficiency.
Lower threshold produces faster turn-on/turn-off, which
minimizes the required dead time. The transistor “No Body
Diode” provides a very low associated parasitic capacitance Cds.
A Schottky Diode is added for applications where a freewheeling
diode is required. Ringing is also reduced so that a lower voltage
device may be a better solution.
GS
D
S
D
G
S
S
N – Channel Power JFET
with Schottky Diode
GS
D
S
D
G
S
S
N – Channel Power JFET
with Schottky Diode
Pin Definitions
Pin Number
Pin Name
Pin Function Description
Product Summary
1
Gate
Gate. Transistor Gate
VDS (V)
Rdson (
Ω)
ID (A)
2
Drain
Drain. Transistor Drain
15V
0.009
30
3
Source
Source. Transistor Source
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Units
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-10
V
Gate-Drain Voltage
VGD
-18
V
Continuous Drain Current
ID
30
A
Pulsed Drain Current
ID
60
A
Single Pulse Drain-to-Source Avalanche Energy at 25
°C
(VDD= 5VDC, IL=30APK, L=0.3mH, RG=100 Ω)
EAS
120
mJ
Junction Temperature
TJ
-55 to 150
°C
°C
Storage Temperature
TSTG
-65 to 150
°C
°C
Lead Soldering Temperature, 10 seconds
T
260
°C
°C
Power Dissipation (Derated at 25
°C on large heat sink)
PD
60
W


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