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SI1403DL 数据表(PDF) 2 Page - Vishay Siliconix |
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SI1403DL 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Si1403DL Vishay Siliconix New Product www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 71072 S-01559—Rev. B, 17-Jul-00 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250 mA –0.6 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = –16 V, VGS = 0 V –1 mA Zero Gate Voltage Drain Current IDSS VDS = –16 V, VGS = 0 V, TJ = 85_C –5 mA On-State Drain Currenta ID(on) VDS = –5 V, VGS = –4.5 V –2 A DiS OS R i a VGS = –4.5 V, ID = –1.5 A 0.145 0.180 W Drain-Source On-State Resistancea rDS(on) VGS = –3.6 V, ID = –1.4 A 0.165 0.200 W VGS = –2.5 V, ID = –0.8 A 0.220 0.265 Forward Transconductancea gfs VDS = –10 V, ID = –1.5 A 3.8 S Diode Forward Voltagea VSD IS = –0.8 A, VGS = 0 V –0.78 –1.1 V Dynamicb Total Gate Charge Qg V10 V V 4 5 V I 1 5 A 3.7 4.5 C Gate-Source Charge Qgs VDS = –10 V, VGS = –4.5 V, ID = –1.5 A 0.9 nC Gate-Drain Charge Qgd 0.9 Turn-On Delay Time td(on) V10 V R 10 W 8 12 Rise Time tr VDD = –10 V, RL = 10 W I1 A V 4 5 V R 6 W 25 40 Turn-Off Delay Time td(off) DD , L ID ^ –1 A, VGEN = –4.5 V, RG = 6 W 21 32 ns Fall Time tf 20 30 Source-Drain Reverse Recovery Time trr IF = –0.8 A, di/dt = 100 A/ms 20 40 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 0.8 1.6 2.4 3.2 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.8 1.6 2.4 3.2 4.0 0 0.8 1.6 2.4 3.2 4.0 VGS = 5 thru 2.5 V TC = –55_C 125 _C 2 V 25 _C Output Characteristics Transfer Characteristics VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) 1, 1.5 V |
类似零件编号 - SI1403DL |
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类似说明 - SI1403DL |
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