SI1403DL datasheet(2/4 Pages) VISHAY

部件名	SI1403DL

功能描述	P-Channel 2.5-V (G-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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2 / 4 page

Si1403DL

Vishay Siliconix

New Product

www.vishay.com

S FaxBack 408-970-5600

2-2

Document Number: 71072

S-01559—Rev. B, 17-Jul-00

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

–0.6

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = –16 V, VGS = 0 V

–1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = –16 V, VGS = 0 V, TJ = 85_C

–5

mA

On-State Drain Currenta

ID(on)

VDS = –5 V, VGS = –4.5 V

–2

A

DiS

OS

R

i

a

VGS = –4.5 V, ID = –1.5 A

0.145

0.180

W

Drain-Source On-State Resistancea

rDS(on)

VGS = –3.6 V, ID = –1.4 A

0.165

0.200

W

VGS = –2.5 V, ID = –0.8 A

0.220

0.265

Forward Transconductancea

gfs

VDS = –10 V, ID = –1.5 A

3.8

S

Diode Forward Voltagea

VSD

IS = –0.8 A, VGS = 0 V

–0.78

–1.1

V

Dynamicb

Total Gate Charge

Qg

V10 V V

4 5 V I

1 5 A

3.7

4.5

C

Gate-Source Charge

Qgs

VDS = –10 V, VGS = –4.5 V, ID = –1.5 A

0.9

nC

Gate-Drain Charge

Qgd

0.9

Turn-On Delay Time

td(on)

V10 V R

10

W

8

12

Rise Time

tr

VDD = –10 V, RL = 10 W

I1 A V

4 5 V R

6

W

25

40

Turn-Off Delay Time

td(off)

DD

,

L

ID ^ –1 A, VGEN = –4.5 V, RG = 6 W

21

32

ns

Fall Time

tf

20

30

Source-Drain Reverse Recovery Time

trr

IF = –0.8 A, di/dt = 100 A/ms

20

40

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

0.8

1.6

2.4

3.2

4.0

0

0.5

1.0

1.5

2.0

2.5

3.0

0

0.8

1.6

2.4

3.2

4.0

0

0.8

1.6

2.4

3.2

4.0

VGS = 5 thru 2.5 V

TC = –55_C

125

_C

2 V

25

_C

Output Characteristics

Transfer Characteristics

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

1, 1.5 V

类似零件编号 - SI1403DL

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI1403DL	414Kb / 5P	P-Channel 2.5-V (G-S) MOSFET Rev. C, 13-Mar-06
Vishay Siliconix	SI1403DL-T1	414Kb / 5P	P-Channel 2.5-V (G-S) MOSFET Rev. C, 13-Mar-06
VBsemi Electronics Co.,...	SI1403DL-T1-E3	1Mb / 9P	P-Channel 20 V (D-S) MOSFET

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