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SMP80MC-120 数据表(PDF) 3 Page - STMicroelectronics |
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SMP80MC-120 数据表(HTML) 3 Page - STMicroelectronics |
3 / 9 page SMP80MC 3/9 Table 4: Thermal Resistances Table 5: Electrical Characteristics (Tamb = 25°C) Symbol Parameter Value Unit Rth(j-a) Junction to ambient (with recommended footprint) 100 °C/W Rth(j-l) Junction to leads 20 °C/W Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VBO Breakover voltage IRM Leakage current IPP Peak pulse current IBO Breakover current IH Holding current VR Continuous reverse voltage IR Leakage current at VR C Capacitance Types IRM @ VRM IR @ VR Dynamic VBO Static VBO @ IBO IH CC max. max. max. max. max. min. typ. typ. note1 note 2 note 3 note 4 note 5 note 6 µAVµAV V V mA mA pF pF SMP80MC-120 2 108 5 120 155 155 800 150 12 25 SMP80MC-140 126 140 180 180 SMP80MC-160 144 160 205 205 SMP80MC-200 180 200 255 255 SMP80MC-230 207 230 295 295 SMP80MC-270 243 270 345 345 Note 1: IR measured at VR guarantee VBR min ≥ VR Note 2: see functional test circuit 1 Note 3: see test circuit 2 Note 4: see functional holding current test circuit 3 Note 5: VR = 50V bias, VRMS=1V, F=1MHz Note 6: VR = 2V bias, VRMS=1V, F=1MHz |
类似零件编号 - SMP80MC-120 |
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类似说明 - SMP80MC-120 |
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