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LM317MBT 数据表(PDF) 4 Page - ON Semiconductor |
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LM317MBT 数据表(HTML) 4 Page - ON Semiconductor |
4 / 16 page LM317M http://onsemi.com 4 ELECTRICAL CHARACTERISTICS (VI − VO = 5.0 V; IO = 0.1 A, TJ = Tlow to Thigh (Note 6), unless otherwise noted.) LM317MA / LM317MAB Characteristics Figure Symbol Min Typ Max Unit Line Regulation (Note 7) (TA = 25°C, 3.0 V ≤ VI − VO ≤ 40 V) 3 Regline − 0.01 0.04 %/V Load Regulation (Note 7) TA = 25°C, 10 mA ≤ IO ≤ 0.5 A VO ≤ 5.0 V VO ≥ 5.0 V 4 Regload − − 5.0 0.1 25 0.5 mV % VO Adjustment Pin Current 5 IAdj − 50 100 mA Adjustment Pin Current Change 2.5 V ≤ VI − VO ≤ 40 V, 10 mA ≤ IL ≤ 0.5 A, PD ≤ Pmax 3, 4 DIAdj − 0.2 5.0 mA Reference Voltage 3.0 V ≤ VI − VO ≤ 40 V, 10 mA ≤ IL ≤ 0.5 A, PD ≤ Pmax 5 Vref 1.225 1.250 1.275 V Line Regulation (Note 7) 3.0 V ≤ VI−VO ≤ 40 V 3 Regline − 0.02 0.07 %/V Load Regulation (Note 7) 10 mA ≤ IO ≤ 0.5 A VO ≤ 5.0 V VO ≥ 5.0 V 4 Regload − − 20 0.3 70 1.5 mV % VO Temperature Stability (Tlow ≤ TJ ≤ Thigh) 5 TS − 0.7 − % VO Minimum Load Current to Maintain Regulation (VI − VO = 40 V) 5 ILmin − 3.5 10 mA Maximum Output Current VI − VO ≤ 15 V, PD ≤ Pmax VI − VO = 40 V, PD ≤ Pmax, TA = 25°C 5 Imax 0.5 0.15 0.9 0.25 − − A RMS Noise, % of VO (TA = 25°C, 10 Hz ≤ f ≤ 10 kHz) − N − − − % VO Ripple Rejection, VO = 10 V, f = 120 Hz (Note 8) Without CAdj CAdj = 10 mF 6 RR − 66 65 80 − − dB Long−Term Stability, TJ = Thigh (Note 9) TA= 25°C for End−point Measurements 5 S − 0.3 1.0 %/1.0 kHrs. 6. Tlow to Thigh = 0° to +125°C for LM317MA Tlow to Thigh = − 40° to +125°C for LM317MAB. 7. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account separately. Pulse testing with low duty cycle is used. 8. CAdj, when used, is connected between the adjustment pin and ground. 9. Since Long−Term Stability cannot be measured on each device before shipment, this specification is an engineering estimate of average stability from lot−to−lot. |
类似零件编号 - LM317MBT |
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类似说明 - LM317MBT |
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