KMM372V410CS datasheet(5/19 Pages) SAMSUNG

部件名	KMM372V410CS

功能描述	4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V

Download	19 Pages

Scroll/Zoom	100%

制造商	SAMSUNG [Samsung semiconductor]

网页	http://www.samsung.com/Products/Semiconductor

标志

5 / 19 page

DRAM MODULE

KMM372V410CK/CS

KMM372V400CK/CS

Test condition : Vih/Vil=2.0/0.8V, Voh/Vol=2.0/0.8V, Output loading CL=100pF

Parameter

Symbol

-5

-6

Unit

Note

Min

Max

Min

Max

CAS precharge to W delay time

tCPWD

53

60

ns

7

RAS to W delay time

tRWD

71

83

ns

7,11

CAS setup time(CAS-before-RAS refresh)

tCSR

10

ns

11

CAS hold time(CAS-before-RAS refresh)

tCHR

8

ns

11

RAS precharge to CAS hold time

tRPC

3

ns

11

Access time from CAS precharge

tCPA

35

40

ns

3,11

Fast page mode cycle time

tPC

35

40

ns

Fast page mode read-modify-write cycle time

tPRWC

75

80

ns

CAS precharge time(Fast page cycle)

tCP

10

ns

RAS pulse width (Fast page cycle)

tRASP

50

200K

60

200K

ns

RAS hold time from CAS precharge

tRHCP

35

40

ns

11

W to RAS precharge time (C-B-R refresh)

tWRP

15

ns

11

W to RAS hold time (C-B-R refresh)

tWRH

8

ns

11

CAS precharge(C-B-R counter test)

tCPT

20

ns

OE access time

tOEA

18

20

ns

11

OE to data delay

tOED

18

20

ns

11

Output buffer turn off delay time from OE

tOEZ

5

18

5

20

ns

11

OE command hold time

tOEH

13

15

ns

PDE to Valid PD bit

tPD

10

ns

PDE to PD bit Inactive

tPDOFF

2

7

2

7

ns

Present Detect Read Cycle

AC CHARACTERISTICS (0

°C≤TA≤70°C, VCC=3.3V±0.3V. See notes 1,2.)

类似零件编号 - KMM372V410CS

制造商	部件名	数据表	功能描述
Samsung semiconductor	KMM372V413CK	410Kb / 19P	4M x 72 DRAM DIMM with ECC using 2Mx8, Dual Bank 2K Refresh, 3.3V
Samsung semiconductor	KMM372V413CS	410Kb / 19P	4M x 72 DRAM DIMM with ECC using 2Mx8, Dual Bank 2K Refresh, 3.3V

More results

类似说明 - KMM372V410CS

制造商	部件名	数据表	功能描述
Samsung semiconductor	KMM372F410CS	456Kb / 20P	4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
	KMM372C410CK	411Kb / 19P	4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V
	KMM372V404BS	417Kb / 19P	4M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V
	KMM372F804BS	483Kb / 20P	8M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V
	KMM372V413CS	410Kb / 19P	4M x 72 DRAM DIMM with ECC using 2Mx8, Dual Bank 2K Refresh, 3.3V
	KMM372F213CS	455Kb / 20P	2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V
	KMM372V213CS	408Kb / 19P	2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V
	KMM5324004CK	276Kb / 15P	4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
	KMM5324000CK	265Kb / 15P	4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
	KMM372F3280CS1	506Kb / 20P	32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V

More results

KMM372V410CS 数据表(PDF) 5 Page - Samsung semiconductor

KMM372V410CS 数据表(HTML) 5 Page - Samsung semiconductor

类似零件编号 - KMM372V410CS

类似说明 - KMM372V410CS

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

数据表下载

链接网址

KMM372V410CS 数据表(PDF) 5 Page - Samsung semiconductor

KMM372V410CS 数据表(HTML) 5 Page - Samsung semiconductor

类似零件编号 - KMM372V410CS

类似说明 - KMM372V410CS

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

数据表 下载

链接网址

数据表下载