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UGF27025 数据表(PDF) 3 Page - List of Unclassifed Manufacturers

部件名 UGF27025
功能描述  25W, 2.7 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
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制造商  ETC1 [List of Unclassifed Manufacturers]
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标志 ETC1 - List of Unclassifed Manufacturers

UGF27025 数据表(HTML) 3 Page - List of Unclassifed Manufacturers

  UGF27025 Datasheet HTML 1Page - List of Unclassifed Manufacturers UGF27025 Datasheet HTML 2Page - List of Unclassifed Manufacturers UGF27025 Datasheet HTML 3Page - List of Unclassifed Manufacturers UGF27025 Datasheet HTML 4Page - List of Unclassifed Manufacturers UGF27025 Datasheet HTML 5Page - List of Unclassifed Manufacturers UGF27025 Datasheet HTML 6Page - List of Unclassifed Manufacturers UGF27025 Datasheet HTML 7Page - List of Unclassifed Manufacturers  
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UGF27025 Rev. 1
Specifications subject to change without notice
http://www.cree.com/
UGF27025
AC Characteristics (Tc=25°C unless otherwise specified)
Rating
Symbol
Min
Typ
Max
Unit
Input capacitance * (including matching capacitor)
(VDS=28V, VGS=0V, f = 1MHz)
CISS
-
74
-
pF
Output capacitance * (including matching capacitor)
(VDS= 28V, VGS=0V, f = 1MHz)
COSS
-
352
-
pF
Feedback capacitance *
(VDS=28V, VGS=0V, f = 1MHz)
CRSS
-
1.6
-
pF
* Part is internally matched on input and output.
RF and Functional Tests (In Cree Microwave Broadband Fixture, Tc=25° C unless otherwise specified)
Rating
Symbol
Min
Typ
Max
Unit
CW Low Power Gain, Pout=8W
VDD=28V, IDQ=330mA, f=2700 MHz
GL
11
12
-
dB
CW Power Gain, Pout = 25 W
VDD=28V, IDQ=330mA, f=2700 MHz
GP
10
11
-
dB
CW Drain Efficiency, Pout = 25 W,
f=2700 MHz, VDD=28V, IDQ=330mA
ηD
34
38
-
%
Two-Tone Common-Source Amplifier Power Gain
VDD=28V, IDQ=330mA, Pout = 25 W PEP
f1 =2700 MHz and f2=2700.1 MHz
GTT
10.5
11.5
-
dB
Two-Tone Intermodulation Distortion
VDD=28V, IDQ=330mA, Pout = 25 W PEP
f1 =2700 MHz and f2=2700.1 MHz
IMD
-
-30
-28
dBc
Two-Tone Drain Efficiency
VDD=28V, IDQ=330mA, Pout = 25 W PEP
f1 =2700 MHz and f2=2700.1 MHz
ηD2Τ
26
30
-
%
Input Return Loss
VDD =28V, Pout = 25 W PEP, IDQ=330mA
f1 =2500 MHz and 2700 MHz, Tone Spacing =
100kHz
IRL
-
-
-9
dB
Load Mismatch Tolerance
VDS=28V, IDQ= 330 mA, Pout=25W, f=2500 MHz
VSWR
10:1
-
-
Ψ
CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate
precautions in handling, packaging and testing MOS devices must be observed.


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