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BAL99LT1G 数据表(PDF) 2 Page - ON Semiconductor |
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BAL99LT1G 数据表(HTML) 2 Page - ON Semiconductor |
2 / 4 page BAL99LT1 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc, TJ = 150°C) IR − − − 2.5 30 50 mAdc Reverse Breakdown Voltage, (IR = 100 mAdc) V(BR) 70 − Vdc Forward Voltage, (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF − − − − 715 855 1000 1250 mV Recovery Current, (IF = 10 mAdc, VR = 5.0 Vdc, RL = 500 W) QS − 45 pC Diode Capacitance, (VR = 0, f = 1.0 MHz) CD − 1.5 pF Reverse Recovery Time, (IF = IR = 10 mAdc, RL = 100 W, measured at IR = 1.0 mAdc) trr − 6.0 ns Forward Recovery Voltage, (IF = 10 mAdc, tr = 20 ns) VFR − 1.75 Vdc TYPICAL CHARACTERISTICS 100 0.2 0.4 VF, FORWARD VOLTAGE (VOLTS) 0.6 0.8 1.0 1.2 10 1.0 0.1 TA = 85°C 10 0 VR, REVERSE VOLTAGE (VOLTS) 1.0 0.1 0.01 0.001 10 20 30 40 50 0.68 0 VR, REVERSE VOLTAGE (VOLTS) 0.64 0.60 0.56 0.52 24 6 8 TA = 25°C TA = −40°C TA = 150°C TA = 125°C TA = 85°C TA = 55°C TA = 25°C Figure 1. Forward Voltage Figure 2. Leakage Current Figure 3. Capacitance |
类似零件编号 - BAL99LT1G |
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类似说明 - BAL99LT1G |
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