GD25B32C datasheet(48/56 Pages) GIGADEVICE

部件名	GD25B32C

功能描述	3.3V Uniform Sector Dual and Quad Serial Flash

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制造商	GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]

网页	http://www.gigadevice.com/

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48 / 56 page

3.3V Uniform Sector

Dual and Quad Serial Flash

GD25B32C

48

8.6. AC CHARACTERISTICS

(T= -40℃~85℃, VCC=2.7~3.6V, CL=30pf)

Symbol

Parameter

Min.

Typ.

Max.

Unit.

FC

Serial Clock Frequency For: Dual I/O (BBH), Quad I/O(EBH),

Quad Output(6BH) (Dual I/O & Quad I/O Without High

Performance Mode), on 3.0V-3.6V power supply

104

MHz

fC1

Serial Clock Frequency For: Dual I/O(BBH), Quad I/O (EBH),

Quad Output(6BH) (Dual I/O & Quad I/O Without High

Performance Mode), on 2.7V-3.0V power supply

80

MHz

fC2

Serial Clock Frequency For: Dual I/O(BBH), Quad I/O (EBH),

Quad Output(6BH) (Dual I/O & Quad I/O With High

Performance Mode), on 2.7V-3.6V power supply

120

MHz

fR

Serial Clock Frequency For: Read (03H)

80

MHz

tCLH

Serial Clock High Time

4

ns

tCLL

Serial Clock Low Time

4

ns

tCLCH

Serial Clock Rise Time (Slew Rate)

0.1

V/ns

tCHCL

Serial Clock Fall Time (Slew Rate)

0.1

V/ns

tSLCH

CS# Active Setup Time

5

ns

tCHSH

CS# Active Hold Time

5

ns

tSHCH

CS# Not Active Setup Time

5

ns

tCHSL

CS# Not Active Hold Time

5

ns

tSHSL

CS# High Time (Read/Write)

20

ns

tSHQZ

Output Disable Time

6

ns

tCLQX

Output Hold Time

1.2

ns

tDVCH

Data In Setup Time

2

ns

tCHDX

Data In Hold Time

2

ns

tCLQV

Clock Low To Output Valid

7

ns

tDP

CS# High To Deep Power-Down Mode

20

μs

tRES1

CS# High To Standby Mode Without Electronic Signature

Read

20

μs

tRES2

CS# High To Standby Mode With Electronic Signature Read

20

μs

tSUS

CS# High To Next Command After Suspend

20

μs

tRS

Latency Between Resume And Next Suspend

100

μs

tRST

CS# High To Next Command After Reset (Except From

Erase)

30

μs

tRST_E

CS# High To Next Command After Reset (From Erase)

12

ms

tW

Write Status Register Cycle Time

5

30

ms

tBP1

Byte Program Time (First Byte)

30

50

μs

tBP2

Additional Byte Program Time (After First Byte)

2.5

12

μs

tPP

Page Programming Time

0.6

2.4

ms

tSE

Sector Erase Time (4K Bytes)

50

300

ms

tBE1

Block Erase Time (32K Bytes)

0.15

1.6

s

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