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SPP06N80C2 数据表(PDF) 2 Page - Infineon Technologies AG |
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SPP06N80C2 数据表(HTML) 2 Page - Infineon Technologies AG |
2 / 11 page 2000-05-29 Page 2 SPP06N80C2 Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.5 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 Linear derating factor - - 0.67 W/K Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS=0V, ID=0.25mA V(BR)DSS 800 - - V Drain-source avalanche breakdown voltage VGS=0V, ID=6A V(BR)DS - 870 - Gate threshold voltage, VGS = VDS ID=250µA VGS(th) 2 3 4 Zero gate voltage drain current VDS = 800 V, VGS = 0 V, Tj = 25 °C VDS = 800 V, VGS = 0 V, Tj = 150 °C IDSS - - 0.5 - 10 100 µA Gate-source leakage current VGS=20V, VDS=0V IGSS - - 100 nA Drain-source on-state resistance VGS=10V, ID=3.8A, Tj=25°C RDS(on) - 780 900 m W Gate input resistance f = 1 MHz, open drain RG - 0.7 - W 1Repetitve avalanche causes additional power losses that can be calculated asP AV=E AR*f. |
类似零件编号 - SPP06N80C2 |
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类似说明 - SPP06N80C2 |
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