ME15N10-G datasheet(1/4 Pages) ETC2

部件名	ME15N10-G

功能描述	Super high density cell design for extremely low RDS(ON)

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N-Channel 100-V (D-S) MOSFET

ME15N10/ME15N10-G

01

Dec,2009-Ver1.0

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

100

V

Gate-Source Voltage

VGSS

±20

V

TC=25℃

14.7

Continuous Drain

Current(Tj=150℃)

TC=70℃

ID

13.6

A

Pulsed Drain Current

IDM

59

A

TC=25℃

34.7

Maximum Power Dissipation

TC=70℃

PD

22.2

W

Operating Junction Temperature

TJ

-55 to 150

℃

Thermal Resistance-Junction to Case *

RθJC

3.6

℃/W

GENERAL DESCRIPTION

The ME15N10 is the N-Channel logic enhancement mode power

field effect transistors, using high cell density, DMOS trench

technology. This high density process is especially tailored to

minimize on state resistance. These devices are particularly suited

for low voltage application such as cellular phone, notebook

computer power management and other battery powered circuits,

and low in-line power loss that are needed in a very small outline

surface mount package.

FEATURES

●

RDS(ON)≦100mΩ@VGS=10V

●

Super high density cell design for extremely low RDS(ON)

●

Exceptional on-resistance and maximum DC current

capability

APPLICATIONS

●

Power Management in Note book

●

DC/DC Converter

●

Load Switch

●

LCD Display inverter

CONFIGURATION

Absolute Maximum Ratings

(TA=25℃ Unless Otherwise Noted)

* The device mounted on 1in

2 FR4 board with 2 oz copper

e Ordering Information: ME15N10 (Pb-free)

ME15N10-G (Green product-Halogen free)

(TO-252-3L)

Top View

类似零件编号 - ME15N10-G

制造商	部件名	数据表	功能描述
List of Unclassifed Man...	ME15N10-G	1,000Kb / 4P	N-Channel 100-V (D-S) MOSFET

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