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2SK3230B 数据表(PDF) 2 Page - NEC

部件名 2SK3230B
功能描述  N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
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制造商  NEC [NEC]
网页  http://www.nec.com/
标志 NEC - NEC

2SK3230B 数据表(HTML) 2 Page - NEC

  2SK3230B Datasheet HTML 1Page - NEC 2SK3230B Datasheet HTML 2Page - NEC 2SK3230B Datasheet HTML 3Page - NEC 2SK3230B Datasheet HTML 4Page - NEC 2SK3230B Datasheet HTML 5Page - NEC  
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Data Sheet D17283EJ1V0DS
2
2SK3230B
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Cut-off Current
IDSS
VDS = 2.0 V, VGS = 0 V
90
200
430
µ A
Gate Cut-off Voltage
VGS(off)
VDS = 2.0 V, ID = 1.0
µA
−0.37
−1.0
V
Forward Transfer Admittance
| yfs1 |
VDS = 2.0 V, ID = 30
µA, f = 1.0 kHz
300
480
µS
| yfs2 |
VDS = 2.0 V, VGS = 0 V, f = 1.0 kHz
750
1300
µS
Input Capacitance
Ciss
VDS = 2.0 V, VGS = 0 V, f = 1.0 MHz
4.0
pF
Voltage Gain
GV
VDD = 2.0 V, C = 5 pF, RL = 2.2 k
Ω,
−1.0
dB
VIN = 10 mV, f = 1 kHz
Noise Voltage
NV
VDD = 2.0 V, C = 5 pF, RL = 2.2 k
Ω,
−108.5
dB
A-curve
IDSS CLASSIFICATION
MARKING
CE
CF
CH
CJ
IDSS (
µA)
90 to 180
150 to 240
210 to 350
320 to 430
VOLTAGE GAIN TEST CIRCUIT
C
RL
VDD
Out
NOISE VOLTAGE TEST CIRCUIT
C
RL
VDD
NV (r.m.s)
JIS A


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