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2SJ621 数据表(PDF) 1 Page - NEC |
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2SJ621 数据表(HTML) 1 Page - NEC |
1 / 8 page © MOS FIELD EFFECT TRANSISTOR 2SJ621 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DATA SHEET Document No. D15634EJ1V0DS00 (1st edition) Date Published May 2002 NS CP(K) Printed in Japan 2001 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. DESCRIPTION The 2SJ621 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 1.8 V drive available • Low on-state resistance RDS(on)1 = 44 m Ω MAX. (VGS = –4.5 V, ID = –2.0 A) RDS(on)2 = 56 m Ω MAX. (VGS = –3.0 V, ID = –2.0 A) RDS(on)3 = 62 m Ω MAX. (VGS = –2.5 V, ID = –2.0 A) RDS(on)4 = 105 m Ω MAX. (VGS = –1.8 V, ID = –1.5 A) ORDERING INFORMATION PART NUMBER PACKAGE 2SJ621 SC-96 (Mini Mold Thin Type) Marking: XG ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS –12 V Gate to Source Voltage (VDS = 0 V) VGSS m8.0 V Drain Current (DC) (TA = 25°C) ID(DC) m3.5 A Drain Current (pulse) Note1 ID(pulse) m12 A Total Power Dissipation (TA = 25°C) PT1 0.2 W Total Power Dissipation (TA = 25°C) Note2 PT2 1.25 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. PACKAGE DRAWING (Unit: mm) 0.65 0.9 to 1.1 0 to 0.1 0.16 +0.1 –0.06 0.4 +0.1 –0.05 0.95 1 2 3 1.9 2.9 ±0.2 0.95 1 : Gate 2 : Source 3 : Drain EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain |
类似零件编号 - 2SJ621 |
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类似说明 - 2SJ621 |
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