IKP10N60T datasheet(1/14 Pages) INFINEON

部件名	IKP10N60T

功能描述	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

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制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

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IKP10N60T

TrenchStop Series

IKB10N60T

Power Semiconductors

1

Rev. 2 Oct-04

Low Loss DuoPack : IGBT in Trench and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode

•

Very low VCE(sat) 1.5 V (typ.)

•

Maximum Junction Temperature 175 °C

•

Short circuit withstand time – 5

µs

•

Designed for :

- Variable Speed Drive for washing machines, air

conditioners and induction cooking

- Uninterrupted Power Supply

•

Trench and Fieldstop technology for 600 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed

- low VCE(sat)

•

NPT technology offers easy parallel switching capability due to

positive temperature coefficient in VCE(sat)

•

Low EMI

•

Low Gate Charge

•

Very soft, fast recovery anti-parallel EmCon HE diode

•

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

VCE

IC

VCE(sat),Tj=25°C

Tj,max

Marking Code

Package

Ordering Code

IKP10N60T

600V

10A

1.5V

175

°C

K10T60

TO-220

Q67040S4682

IKB10N60T

600V

10A

1.5V

175

°C

K10T60

TO-263

Q67040S4681

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

V CE

600

V

DC collector current, limited by Tjmax

TC = 25

°C

TC = 100

°C

I C

20

10

Pulsed collector current, tp limited by Tjmax

I Cp ul s

30

Turn off safe operating area VCE

≤ 600V, Tj ≤ 175°C

-

30

Diode forward current, limited by Tjmax

TC = 25

°C

TC = 100

°C

I F

20

10

Diode pulsed current, tp limited by Tjmax

I Fpu ls

30

A

Gate-emitter voltage

V GE

±20

V

Short circuit withstand time

1)

VGE = 15V, VCC

≤ 400V, Tj ≤ 150°C

t SC

5

µs

Power dissipation TC = 25

°C

P to t

110

W

Operating junction temperature

T j

-40...+175

Storage temperature

T stg

-55...+175

°C

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

G

C

E

P-TO-263-3-2 (D²-PAK)

(TO-263AB)

P-TO-220-3-1

(TO-220AB)

类似零件编号 - IKP10N60T

制造商	部件名	数据表	功能描述
Infineon Technologies A...	IKP10N60T	352Kb / 13P	TrenchStop Series Rev. 2.3 Sep. 07
	IKP10N60T	458Kb / 13P	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.6 11.05.2015
	IKP10N60T	352Kb / 13P	TrenchStop Series Rev. 2.3 Sep. 07
	IKP10N60T	458Kb / 13P	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.6 11.05.2015

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类似说明 - IKP10N60T

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