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BAT754L 数据表(PDF) 3 Page - NXP Semiconductors |
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BAT754L 数据表(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page  2001 Jan 18 3 Philips Semiconductors Product specification Schottky barrier triple diode BAT754L THERMAL CHARACTERISTICS Note 1. Refer to SOT363 standard mounting conditions. ELECTRICAL CHARACTERISTICS Tamb =25 °C; unless otherwise specified. Note 1. Pulse test: pulse width = 300 µs; δ = 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 416 K/W SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF forward voltage note 1; see Fig.2 IF = 0.1 mA 200 mV IF = 1 mA 260 mV IF = 10 mA 340 mV IF = 30 mA 420 mV IF = 100 mA 750 mV IR reverse current VR = 25 V; note 1; see Fig.3 2 µA Cd diode capacitance VR = 1 V; f = 1 MHz; see Fig.4 10 pF |
类似零件编号 - BAT754L |
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类似说明 - BAT754L |
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