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FDD6676A 数据表(PDF) 5 Page - Fairchild Semiconductor |
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FDD6676A 数据表(HTML) 5 Page - Fairchild Semiconductor |
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5 / 8 page  FDD6676AS Rev A(X) Typical Characteristics 0 2 4 6 8 10 0 1020 304050 Qg, GATE CHARGE (nC) ID = 78A VDS = 10V 20V 15V 0 1000 2000 3000 4000 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Ciss f = 1MHz VGS = 0 V Crss Coss Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms RDS(ON) LIMIT VGS = 10V SINGLE PULSE RθJA = 96 oC/W TA = 25 oC 10ms 10s 100us 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE RθJA = 96°C/W TA = 25°C Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA(t) = r(t) * RθJA RθJA = 96°C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. |
类似零件编号 - FDD6676A |
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类似说明 - FDD6676A |
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