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IRF6610 数据表(PDF) 1 Page - International Rectifier |
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IRF6610 数据表(HTML) 1 Page - International Rectifier |
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1 / 9 page  www.irf.com 1 05/25/05 IRF6610 DirectFET™ Power MOSFET Description The IRF6610 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6610 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6610 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket. PD - 97012 Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance vs. Gate Voltage Typical values (unless otherwise specified) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Lead and Bromide Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.18mH, RG = 25Ω, IAS = 12A. Notes: SQ SX ST MQ MX MT MP 3 4 5 6 7 8 9 10 VGS, Gate -to -Source Voltage (V) 0 5 10 15 20 25 30 ID = 15A TJ = 25°C TJ = 125°C VDSS VGS RDS(on) RDS(on) 20V max ±20V max 5.2m Ω@ 10V 8.2mΩ@ 4.5V Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current EAS Single Pulse Avalanche Energy mJ IAR Avalanche Current A 12 Max. 12 66 120 ±20 20 15 13 0 2 4 6 8 10 12 14 16 QG Total Gate Charge (nC) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 VDS= 16V VDS= 10V ID= 12A Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 11nC 3.6nC 1.3nC 6.4nC 5.9nC 2.1V DirectFET™ ISOMETRIC SQ |
类似零件编号 - IRF6610 |
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类似说明 - IRF6610 |
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