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2SK0655 数据表(PDF) 1 Page - Panasonic Semiconductor |
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2SK0655 数据表(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page 283 Silicon MOS FETs (Small Signal) 2SK0655 (2SK655) Silicon N-Channel MOS FET For switching I Features G High-speed switching G Allowing to supply with the radial taping I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 200 150 −55 to +150 Unit V V mA mA mW °C °C I Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Turn-off time Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Ciss Coss Crss ton* toff* Conditions VDS = 10V, VGS = 0 VGS = 8V, VDS = 0 ID = 100µA, VGS = 0 ID = 100µA, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz VDS = 5V, VGS = 0, f = 1MHz VDD = 5V, VGS = 0 to 5V, RL = 200Ω VDD = 5V, VGS = 5 to 0V, RL = 200Ω * ton, toff measurement circuit min 50 1.5 20 typ 35 10 4 0.5 10 20 Unit µA µA V V Ω mS pF pF pF ns ns max 10 50 3.5 50 15 5 1 Vout VDD = 5V VGS = 5V 50 Ω 200 Ω Vin 90% 10% 10% 90% Vout ton toff Internal Connection G D S 1: Source 2: Drain 3: Gate NS-B1 Package 4.0±0.2 0.75 max. 2.0±0.2 0.45 (2.5) (2.5) 0.7±0.1 23 1 +0.20 –0.10 0.45 +0.20 –0.10 unit: mm Note) The part number in the parenthesis shows conventional part number. |
类似零件编号 - 2SK0655 |
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类似说明 - 2SK0655 |
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