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2SA1015 Datasheet(数据表) 1 Page - Toshiba Semiconductor

部件型号  2SA1015
说明  Audio Frequency Amplifier Applications Low Noise Amplifier Applications
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
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2SA1015(L)
2003-03-27
1
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1015(L)
Audio Frequency Amplifier Applications
Low Noise Amplifier Applications
· High voltage and high current: VCEO = −50 V (min),
IC = −150 mA (max)
· Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA
: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)
· Low noise: NF = 0.2dB (typ.) (f = 1 kHz)
· Complementary to 2SC1815 (L)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-150
mA
Base current
IB
-50
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = -50 V, IE = 0
¾
¾
-0.1
mA
Emitter cut-off current
IEBO
VEB = -5 V, IC = 0
¾
¾
-0.1
mA
hFE (1)
(Note)
VCE = -6 V, IC = -2 mA
70
¾
400
DC current gain
hFE (2)
VCE = -6 V, IC = -150 mA
25
80
¾
Collector-emitter saturation voltage
VCE (sat)
IC = -100 mA, IB = -10 mA
¾
-0.1
-0.3
V
Base-emitter saturation voltage
VBE (sat)
IC = -100 mA, IB = -10 mA
¾
¾
-1.1
V
Transition frequency
fT
VCE = -10 V, IC = -1 mA
80
¾
¾
MHz
Collector output capacitance
Cob
VCB = -10 V, IE = 0
f
= 1 MHz
¾
4
7
pF
Base intrinsic resistance
rbb’
VCB = -10 V, IE = 1 mA
f
= 30 MHz
¾
30
¾
W
NF (1)
VCE = -6 V, IC = -0.1 mA
f
= 100 Hz, RG = 10 kW
¾
0.5
6
Noise figure
NF (2)
VCE = -6 V, IC = -0.1 mA
f
= 1 kHz, RG = 10 kW
¾
0.2
3
dB
Note: hFE (1) classification O: 70~140, Y: 120~240, GR: 200~400
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)




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