数据搜索系统,热门电子元器件搜索 |
|
NTB082N65S3F 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
NTB082N65S3F 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor NTB082N65S3F · ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA 650 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 3 5 V VSD Diode Forward On-Voltage IS= 20A ;VGS= 0 1.3 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=20A 82 mΩ IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ± 100 nA IDSS Zero Gate Voltage Drain Current VDS= 650V; VGS= 0 10 µA |
类似零件编号 - NTB082N65S3F |
|
类似说明 - NTB082N65S3F |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |