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KFN2G16Q2M-DEB6 数据表(PDF) 4 Page - Samsung semiconductor |
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KFN2G16Q2M-DEB6 数据表(HTML) 4 Page - Samsung semiconductor |
4 / 124 page MuxOneNAND1G(KFM1G16Q2M-DEB5) FLASH MEMORY 4 MuxOneNAND2G(KFN2G16Q2M-DEB5) Revision History Revision No. 0.4 1.0 Remark Preliminary Final Draft Date Feb. 28, 2005 May. 17, 2005 History 1. Corrected the errata 2. Updated DC parameters to RMS Values 3. Revised Warm Reset Timing Diagram 4. Added INT Capacitance Information 5. Added Speed Information Ordering Information 6. Added Booting Sequence in Technical Note 7. Revised OTP Program and Lock Flow Chart 8. Revised tOEZ description on Chapter 5.5 9. Revised tASO value to 10ns 10. Added RDY and INT Pin behavior before IOBE=1 11. Added Erase suspend and Resume Information for Multi Block Erase 12. Added ILI and ILO values for DDP on Chater 4.3 1. Corrected the errata 2. Added Data Protection flow chart. 3. Removed Cache Read Operation. 4. Added additional information on command register. 5. Revised Interrupt status register information. 6. Added INT pin schematic. 7. Changed tPGM1 to 205 from 320us, tPGM2 to 220 from 350us. 8. Revised AC/DC parameters 9. Revised ECC Bypass Description 10. Revised Reset Parameters and Timing Diagrams. |
类似零件编号 - KFN2G16Q2M-DEB6 |
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类似说明 - KFN2G16Q2M-DEB6 |
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