FSB50250 datasheet(3/8 Pages) FAIRCHILD

部件名	FSB50250

功能描述	Smart Power Module (SPM)

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制造商	FAIRCHILD [Fairchild Semiconductor]

网页	http://www.fairchildsemi.com

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FSB50250 Rev. B

Electrical Characteristics (T

J = 25°C, VCC=VBS=15V Unless Otherwise Specified)

Inverter Part (Each FRFET Unless Otherwise Specified)

Control Part (Each HVIC Unless Otherwise Specified)

Note:

1. For the measurement point of case temperature TC, please refer to Figure 3 in page 4.

2. BVDSS is the absolute maximum voltage rating between drain and source terminal of each FRFET inside SPM. VPN should be sufficiently less than this value considering the

effect of the stray inductance so that VDS should not exceed BVDSS in any case.

3. tON and tOFF include the propagation delay time of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the

field applcations due to the effect of different printed circuit boards and wirings. Please see Figure 4 for the switching time definition with the switching test circuit of Figure 5.

4. The peak current and voltage of each FRFET during the switching operation should be included in the safe operating area (SOA). Please see Figure 5 for the RBSOA test cir-

cuit that is same as the switching test circuit.

Symbol

Parameter

Conditions

Min Typ Max Units

BVDSS

Drain-Source Breakdown

Voltage

VIN= 0V, ID = 250µA (Note 2)

500

-

V

∆BVDSS/

∆TJ

Breakdown Voltage Tem-

perature Coefficient

ID = 250µA, Referenced to 25°C

-

0.53

-

V/°C

IDSS

Zero Gate Voltage

Drain Current

VIN= 0V, VDS = 500V

-

250

µA

RDS(on)

Static Drain-Source

On-Resistance

VCC = VBS = 15V, VIN = 5V, ID = 0.5A

-

3.3

4.0

Ω

VSD

Drain-Source Diode

Forward Voltage

VCC = VBS = 15V, VIN = 0V, ID = -0.5A

-

1.2

V

tON

Switching Times

VPN = 300V, VCC = VBS = 15V, ID = 0.5A

VIN = 0V ↔ 5V, REH = 0Ω

Inductive load L=3mH

High- and low-side FRFET switching

(Note 3)

-

1273

-

ns

tOFF

-

800

-

ns

trr

-

213

-

ns

EON

-42-

µJ

EOFF

-2.8

-

µJ

RBSOA

Reverse-bias Safe Oper-

ating Area

VPN = 400V, VCC = VBS = 15V, ID = IDP, REH = 0Ω

VDS=BVDSS, TJ = 125°C

High- and low-side FRFET switching (Note 4)

Full Square

Symbol

Parameter

Conditions

Min Typ Max Units

IQCC

Quiescent VCC Current

VCC=15V, VIN=0V Applied between VCC and COM

-

160

µA

IQBS

Quiescent VBS Current

VBS=15V, VIN=0V Applied between VB and VS

-

100

µA

UVCCD

Low-side Undervoltage

Protection (Figure 6)

VCC Undervoltage Protection Detection Level

7.4

8.0

9.4

V

UVCCR

VCC Undervoltage Protection Reset Level

8.0

8.9

9.8

V

UVBSD

High-side Undervoltage

Protection (Figure 7)

VBS Undervoltage Protection Detection Level

7.4

8.0

9.4

V

UVBSR

VBS Undervoltage Protection Reset Level

8.0

8.9

9.8

V

VIH

ON Threshold Voltage

Logic High Level

Applied between IN and COM

3.0

-

V

VIL

OFF Threshold Voltage

Logic Low Level

-

0.8

V

IIH

Input Bias Current

VIN = 5V

Applied between IN and COM

-10

20

µA

IIL

VIN = 0V

-

2

µA

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