2SK3115 datasheet(5/8 Pages) NEC

部件名	2SK3115

功能描述	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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制造商	NEC [NEC]

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Data Sheet D13338EJ2V0DS

5

2SK3115

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

50

150

ID = 6.0 A

3.0 A

2.0

0

100

−50

Tch - Channel Temperature - ˚C

3.0

1.0

VGS = 10 V

Pulsed

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

VSD - Source to Drain Voltage - V

1.5

1.0

0.5

0

100

10

1.0

0.1

Pulsed

0 V

VGS = 10 V

1000

100

10

1.0

10000

1000

100

10

1

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE

Ciss

Coss

Crss

VDS - Drain to Source Voltage - V

VGS = 0 V

f = 1 MHz

SWITCHING CHARACTERISTICS

0.1

1

10

ID - Drain Current - A

100

10

1

0.1

VDD = 150 V

VGS = 10 V

RG = 10

Ω

td(off)

td(on)

tf

tr

REVERSE RECOVERY TIME vs.

DRAIN CURRENT

1.0

10

100

0.1

ID - Drain Current - A

10000

1000

100

10

di/dt = 50 A/

µs

VGS = 0 V

Qg - Gate Charge - nC

020

10

30

40

600

400

200

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

16

14

12

10

8

6

4

2

0

ID = 6 A

VGS

VDD = 450 V

300 V

120 V

VDS

类似零件编号 - 2SK3115

制造商	部件名	数据表	功能描述
VBsemi Electronics Co.,...	2SK3115	1Mb / 10P	N-Channel 6 50V (D-S) Power MOSFET
Inchange Semiconductor ...	2SK3115	323Kb / 2P	isc N-Channel MOSFET Transistor
Renesas Technology Corp	2SK3115	235Kb / 10P	MOS FIELD EFFECT TRANSISTOR 2001
	2SK3115B	351Kb / 9P	MOS FIELD EFFECT TRANSISTOR 2006
	2SK3115B-S17-AY	351Kb / 9P	MOS FIELD EFFECT TRANSISTOR 2006

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